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STGW60H65DFB

Part No STGW60H65DFB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Low thermal resistance | IGBT 650V 80A 375W TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 240A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 60A
Maximum Power 375W
Switching Energy 1.09mJ (on), 626μJ (off)
Input Type Standard
Gate Charge 306nC
Td (on/off) at 25°C 51ns/160ns
Test Condition 400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr) 60ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 727289-STGW60H65DFB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGW60H65DFB CAD Model

Description

STGW60H65DFB - STMicroelectronics

The STGW60H65DFB is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for a wide array of power electronics applications. This high-performance device is tailored for efficiency and reliability in high-voltage and high-current environments, making it an ideal choice for applications such as motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.

Key Features:

  • High voltage capability: With a collector-emitter voltage (VCE) of 650V, the STGW60H65DFB is well-suited for systems that require high voltage operation.
  • High current rating: This IGBT can handle continuous collector current (IC) up to 60A at 25°C, making it robust for high power applications.
  • Low on-state voltage drop (VCE(sat)): The low on-state voltage drop reduces conduction losses and improves overall efficiency.
  • Short circuit rating: It offers a short circuit withstand time of 10μs, providing reliable performance under fault conditions.
  • Co-packaged diode: The device includes a fast and soft recovery anti-parallel diode, which is optimized for the switching performance and reduces the need for external components.
  • High switching speed: The STGW60H65DFB is designed to support high-frequency operation, which is beneficial for reducing the size of passive components and improving power density.

Advanced Technology:

STMicroelectronics has incorporated its advanced trench gate field-stop technology into the STGW60H65DFB, which provides a perfect balance between conduction and switching losses. This technology enables the device to operate with high efficiency, thus reducing the thermal challenges in power electronic systems.

Package and Safety:

The STGW60H65DFB is housed in a TO-247 long leads package, which is known for excellent thermal performance and mechanical ruggedness. The package design ensures a good heat dissipation and simplifies the mounting process. Moreover, the device is RoHS compliant and Halogen-free, ensuring that it meets the latest environmental standards for electronic components.

In conclusion, the STGW60H65DFB from STMicroelectronics represents a blend of performance, efficiency, and reliability, making it an excellent choice for designers who require a high-performing IGBT for their power conversion applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4926 $52.3890
35+ $2.8657 $100.2995
55+ $2.7762 $152.6910
75+ $2.6866 $201.4950
97+ $2.5971 $251.9187
129+ $2.3284 $300.3636
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Availability: 6,198 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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