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Same model may have multiple batches, images only for reference.
GT8G133(TE12L,Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

GT8G133(TE12L,Q)

Part No GT8G133(TE12L,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description IGBT 400V 600MW 8TSSOP / Trans IGBT Chip N-CH 400V 1100mW 8-Pin TSSOP T/R
Datasheet
GT8G133(TE12L,Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel package
Part Status Obsolete(EOL)
Voltage - Collector Emitter Breakdown (Maximum) 400V
Current - Collector Pulsed (Icm) 150A
Vce(on) (Maximum) @ Vge, Ic 2.9V @ 4V, 150A
Power - Max 600mW
Input Type Standard
Td (on/off) @ 25°C 1.7μs/2μs
Operating Temperature Range 150°C (TJ)
Mounting SMD
Package 8-TSSOP (0.173", 4.40mm Width)
Manufacturer Package 8-TSSOP
Win Source Part Number 775458-GT8G133(TE12L,Q)
Popularity Medium
Supply and Demand Status Limited
Family Name GT8G133
Introduction Date November 15, 2004
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian GT8G133(TE12L,Q) CAD Model

Description

The Toshiba GT8G133 is a high-power N-channel MOSFET transistor that is designed for use in a variety of applications.

  • Package / Case: 8-TSSOP
  • Mounting Type: Surface Mount
  • Maximum Power Rating: 600mW
  • Maximum Collector Current: 150A
  • Switching Time: 1.7μs/2μs
  • Collector-Emitter Voltage Breakdown: 400V
  • Family: GT8G133
  • Obsolete: Yes
  • EOL Support: Limited

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