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IXBH20N360HV

Name: IXBH20N360HV
Brand: IXYS
SKU: 777600
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXBH20N360HV
Manufacturer	IXYS
Catalog	IGBTs - Single
Description	IGBT 3600V 70A TO-247HV / Bipolar MOS Transistor
Datasheet	IXBH20N360HV Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Series	BIMOSFET
Packaging	Tube
Voltage - Collector Emitter Breakdown (Maximum)	3600V
Current - Collector (Ic) (Maximum)	70A
Current - Collector Pulsed (Icm)	220A
Vce(on) (Maximum) @ Vge, Ic	3.4V @ 15V, 20A
Power - Max	430W
Switching Energy	15.5mJ (on), 4.3mJ (off)
Input Type	Standard
Gate Charge	110nC
Td (on/off) @ 25°C	18ns/238ns
Test Condition	1500V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr)	1.7μs
Operating Temperature Range	-55°C ~ 150°C (TJ)
Mounting Style	Through Hole
Package	TO-247-3 Variant
Manufacturer Package	TO-247HV
Win Source Part Number	777600-IXBH20N360HV
Popularity	Medium
Supply and Demand Status	Limited
Introduction Date	December 15, 2014
Halogen Free	Compliant
Estimated EOL Date	2030
Ultra Librarian 3D Model	Ultra Librarian IXBH20N360HV CAD Model

Description

The IXYS IXBH20N360HV is a medium popularity electronic component.

Series: BIMOSFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3 Variant
Maximum Power: 430W
Reverse Recovery Time (trr): 1.7μs
Current Collector Pulsed (Icm): 220A
Switching Energy: 15.5mJ (on), 4.3mJ (off)
Input Type: Standard
Gate Charge: 110nC
Test Condition: 1500V, 20A, 10 Ohm, 15V
Current Collector (Ic) (Maximum): 70A
Voltage Collector Emitter Breakdown (Maximum): 3600V
Vce(on) (Maximum) @ Vge, Ic: 3.4V @ 15V, 20A
Introduction Date: December 15, 2014
Estimated EOL Date: 2030

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