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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 18A
Pulsed Collector Current 25A
Collector-emitter saturation voltage(Max) 1.65V @ 15V, 5A
Maximum Power Dissipation 60W
Total Switching Energy(Ets) 60μJ (on), 340μJ (off)
Input Type Standard
Gate Charge 18nC
Turn-on and Turn-off delay time 19ns/160ns
Testing Conditions 390V, 5A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Win Source Part Number 1103013-STGD10NC60ST4
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STGD10NC60ST4 CAD Model

Description

STGD10NC60ST4 - IGBT Transistor from STMicroelectronics

The STGD10NC60ST4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by the renowned semiconductor company, STMicroelectronics. This IGBT is part of the PowerMESHâ„¢ IGBT series, which combines the high efficiency of MOSFETs with the high current and low saturation voltage capability of bipolar transistors. The STGD10NC60ST4 is tailored for a wide range of applications, including motor drives, uninterruptible power supplies (UPS), inverter circuits, and general-purpose switching where energy efficiency is of paramount importance.

With a maximum collector-emitter voltage of 600V and a collector current rating of 10A, this device is capable of handling significant power levels. The STGD10NC60ST4 is characterized by its low on-voltage drop (V<sub>CE(sat)) and minimized gate charge (Q<sub>g), which enhance its overall efficiency and switching performance. The IGBT is also equipped with a fast recovery diode, which is essential for high-speed switching applications and helps to reduce electromagnetic interference (EMI).

The device comes in a surface-mount DPAK (TO-252) package, which is suitable for compact designs and ensures good thermal performance. The STGD10NC60ST4 is also RoHS compliant, adhering to the latest environmental regulations and standards for electronic components.

Key features of the STGD10NC60ST4 include:

  • High input impedance and high-speed switching
  • Low gate charge and low on-resistance
  • Very tight parameter distribution
  • High ruggedness, temperature stability, and reliability
  • Co-packaged with a fast recovery diode

STMicroelectronics ensures that the STGD10NC60ST4 meets stringent quality and performance criteria, making it a reliable choice for designers and engineers looking to optimize their power management solutions. Whether for industrial or consumer applications, the STGD10NC60ST4 offers a blend of efficiency, power handling, and robustness that can help to enhance the performance and longevity of electronic systems.

For further details, datasheets, and support, customers can visit the official STMicroelectronics website or contact their local ST sales office.

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