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Same model may have multiple batches, images only for reference.
FGB40N6S2T Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FGB40N6S2T

Part No FGB40N6S2T
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 75A 290W TO263AB / Trans IGBT Chip N-CH 600V 75A 290000mW 3-Pin(2+Tab) D2PAK T/R
Datasheet
FGB40N6S2T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel package
Part Status Obsolete(EOL)
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 75A
Current - Collector Pulsed (Icm) 180A
Vce(on) (Maximum) @ Vge, Ic 2.7V @ 15V, 20A
Power - Max 290W
Switching Energy 115μJ (on), 195μJ (off)
Input Type Standard
Gate Charge 35nC
Td (on/off) @ 25°C 8ns/35ns
Test Condition 390V, 20A, 3 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Package TO-263AB
Win Source Part Number 774532-FGB40N6S2T
Popularity Medium
Supply and Demand Status Limited
Family Name FGB40N6S2
Introduction Date July 15, 2002
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian FGB40N6S2T CAD Model

Description

This electronic component is a power MOSFET manufactured by Fairchild/ON Semiconductor. The Win Source Part Number for this product is 774532-FGB40N6S2T. This product has a packaging of reel package and has an operating temperature range of -55°C ~ 150°C.

  • Maximum Power: 290W
  • Current-Collector Pulsed (Icm): 180A
  • Switching Energy: 115μJ (on), 195μJ (off)
  • Gate Charge: 35nC
  • Alternative Parts (Cross-Reference): STGB40H65FB, IRGS4640DTRLPbF, IRGS30B60K, STGB20NC60V
  • Status: Obsolete

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