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STGWT60H65DFB

Part No STGWT60H65DFB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 650V 80A 375W TO3P-3L / Low thermal resistance
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 240A
Vce(on) (Maximum) at Vge, Ic 2V at 15V, 60A
Power - Max 375W
Switching Energy 1.09mJ (on), 626μJ (off)
Input Type Standard
Gate Charge 306nC
Td (on/off) at 25°C 51ns/160ns
Test Condition 400V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr) 60ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-3P-3, SC-65-3
Supplier Device Package TO-3P
Part Number Series STGWT60
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 804501-STGWT60H65DFB
Ultra Librarian 3D Model Ultra Librarian STGWT60H65DFB CAD Model

Description

STGWT60H65DFB - STMicroelectronics Power Transistor

The STGWT60H65DFB is a state-of-the-art power transistor from STMicroelectronics, designed to meet the high efficiency and reliability demands of modern power applications. This device is part of the STPOWER family, which is renowned for its performance in power conversion and management tasks across a wide range of industries.

This high-voltage, field-stop trench gate IGBT (Insulated Gate Bipolar Transistor) is tailored for applications requiring fast switching and low conduction losses. With a collector-emitter voltage of 650V and a collector current rating of 60A, the STGWT60H65DFB is well-suited for high-power systems such as solar inverters, uninterruptible power supplies (UPS), motor drives, and other energy-intensive applications.

The STGWT60H65DFB boasts a robust and rugged design that ensures reliability even under harsh conditions. Its maximum junction temperature of 175°C allows for stable operation over a wide temperature range, making it a versatile choice for various environments. Additionally, its co-packaged freewheeling diode is optimized for low reverse recovery time (trr), further enhancing the efficiency of the overall system by reducing switching losses.

Key features of the STGWT60H65DFB include:

  • 650V collector-emitter voltage (V<sub>CE)
  • 60A collector current (I<sub>C)
  • Low on-state voltage drop (V<sub>CE(sat)) for improved conduction efficiency
  • High-speed switching capability
  • Optimized for soft switching (ZVS) applications
  • Co-packaged with a fast and soft recovery anti-parallel diode

Manufactured with STMicroelectronics' advanced trench gate field-stop technology, the STGWT60H65DFB minimizes on-state voltage drop and switching losses, which leads to increased efficiency and reduced thermal stress on the device. This contributes to a longer lifespan and reduced cooling requirements, which can lower the overall cost of ownership.

The STGWT60H65DFB comes in a TO-247 long leads package, which is widely accepted in the industry and compatible with conventional mounting techniques. This ease of integration, combined with its exceptional performance, makes the STGWT60H65DFB an excellent choice for designers looking to optimize their power systems for both performance and cost.

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78+ $3.8806 $302.6868
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Availability: 4,160 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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