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IGD01N120H2BUMA1

Name: IGD01N120H2BUMA1
Brand: Infineon Technologies
SKU: 776688
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IGD01N120H2BUMA1
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	IGBT 1200V 3.2A 28W TO252-3 / Trans IGBT Chip N-CH 1200V 3.2A 28000mW 3-Pin(2+Tab) DPAK T/R
Datasheet	IGD01N120H2BUMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel package
Voltage - Collector Emitter Breakdown (Maximum)	1200V
Current - Collector (Ic) (Maximum)	3.2A
Current - Collector Pulsed (Icm)	3.5A
Vce(on) (Maximum) @ Vge, Ic	2.8V @ 15V, 1A
Power - Max	28W
Switching Energy	140μJ
Input Type	Standard
Gate Charge	8.6nC
Td (on/off) @ 25°C	13ns/370ns
Test Condition	800V, 1A, 241 Ohm, 15V
Operating Temperature Range	-40°C ~ 150°C (TJ)
Mounting	SMD
Package	TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Package	PG-TO252-3
Win Source Part Number	776688-IGD01N120H2BUMA1
Popularity	Medium
Supply and Demand Status	Balance
Family Name	IGD01N120H2BUMA1
Introduction Date	June 12, 2003
ECCN	EAR99
Country of Origin	Malaysia
Halogen Free	Not Compliant
Estimated EOL Date	2024
Ultra Librarian 3D Model	Ultra Librarian IGD01N120H2BUMA1 CAD Model

Description

The IGD01N120H2BUMA1 is a high voltage transistor from Infineon Technologies, designed for use in a variety of applications.

Voltage - Collector Emitter Breakdown (Maximum): 1200V
Current - Collector (Ic) (maximum): 3.2A
Power - Max: 28W
Gate Charge: 8.6nC
Operating Temperature Range: -40°C to 150°C (TJ)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
20+	$2.5071	$50.1420
49+	$2.0572	$100.8028
76+	$1.9929	$151.4604
104+	$1.9286	$200.5744
135+	$1.8643	$251.6805
180+	$1.6714	$300.8520

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,310 pieces

MOQ: 20 pcs

Order Increment : 1 pcs

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