EN
  • EN
  • DE

STGW10M65DF2

Part No STGW10M65DF2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description TRENCH GATE FIELD-STOP IGBT M SE  /  IGBT Trench Field Stop 650 V 20 A 115 W Through Hole TO-247-3
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series M
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 40 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A
Power - Max 115 W
Switching Energy 120µJ (on), 270µJ (off)
Input Type Standard
Gate Charge 28 nC
Td (on/off) @ 25°C 19ns/91ns
Test Condition 400V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr) 96 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number STGW10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16969
Standard Package 1,200
Win Source Part Number 1096883-STGW10M65DF2
Ultra Librarian 3D Model Ultra Librarian STGW10M65DF2 CAD Model

Description

STGW10M65DF2 - Trench Gate Field-Stop IGBT

The STGW10M65DF2 is a high-performance 650V IGBT developed by STMicroelectronics, designed to offer an optimal balance between conduction and switching losses. This advanced technology device is particularly suitable for applications requiring high efficiency and fast switching, such as power supplies, solar inverters, welding equipment, and motor drives.

Featuring a trench gate and field-stop structure, the STGW10M65DF2 provides a low on-voltage drop (V<sub>CE(sat)) and minimal energy losses during turn-off, making it an excellent choice for high-frequency operations. Its maximum collector current (I<sub>C) of 10A at a temperature of 25°C ensures reliable performance even under high load conditions.

The robust design of this IGBT includes a co-packaged fast recovery diode, which significantly reduces the turn-off energy and recovery time. This integrated diode is optimized for the IGBT's switching characteristics, enhancing the overall efficiency of the system and reducing the need for additional external components.

Key features of the STGW10M65DF2 include:

  • Maximum collector-emitter voltage (V<sub>CE) of 650V
  • Low saturation voltage of 1.85V (typical) at I<sub>C=10A
  • High-speed switching with a maximum of 30 kHz switching frequency
  • High junction temperature capability (T<sub>j) up to 175°C
  • Low total gate charge (Q<sub>g) for reduced driving losses
  • Short-circuit withstand time of 5 µs
  • Co-packaged with a fast recovery anti-parallel diode

STMicroelectronics has designed the STGW10M65DF2 with an emphasis on reliability and performance, ensuring that it meets the stringent requirements of modern power electronic systems. Its package is engineered for optimal thermal performance, which, combined with its advanced electrical characteristics, makes it a powerful and versatile component for a wide range of high-power applications.

Whether you are designing an energy-efficient inverter or a robust motor control system, the STGW10M65DF2 provides the performance and reliability needed to deliver top-notch results in a compact, energy-conscious design.

You May Also Be Interested in

ON Semiconductor
IGBT 600V 24A 54W TO-3PF
Need more? Email Us
Rohm Semiconductor
IGBT TRENCH FS 650V 40A TO-247N
Need more? Email Us
IXYS
IGBT 1200V 200A TO-247
Need more? Email Us
Littelfuse Inc.
IGBT 445V 12A TO-252
Need more? Email Us
IXYS
IGBT 1200V 40A TO-220-3
Need more? Email Us
IXYS
IGBT PT 1200V 240A PLUS247
Need more? Email Us
Infineon Technologies
IGBT TRENCH 600V 48A TO-247AC
Need more? Email Us
IXYS
IGBT PT 1200V 22A TO-263AA
Need more? Email Us
Infineon Technologies
IGBT TRENCH 600V 74A TO-247AC
Need more? Email Us

Top Sellers

Bosch Sensortec
SENSOR PRESSURE HUMIDITY TEMP
Lowest to $3.9204
JST Sales America Inc.
CONN HEADER SMD 6POS 1.25MM
Lowest to $0.5279
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.7805
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.7805
ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0543
Vicor Corporation
DC DC CONVERTER 10-50V / 8V – 60VIN , 10V – 50VOUT , 50 – 140W Cool-Power ZVS Buck-Boost Regulator
Lowest to $41.3948
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0357
Texas Instruments
DC DC CONVERTER 1-16V / Non-Isolated PoL Module DC DC Converter 1 Output 1 ~ 16V 6A 3V - 36V Input
Lowest to $13.4125
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
Peregrine Semiconductor
RF ATTENUATOR 31.5DB 50OHM 20QFN
Lowest to $1.6632
JST Sales America Inc.
CONN HEADER GH TOP 4POS 1.25MM
Lowest to $0.1782
Altera
IC CPLD 128MC 10NS 100TQFP
Lowest to $3.3015
Texas Instruments
IC CTRLR HOT SWAP 48V 10-MSOP
Lowest to $4.1579
Bosch Sensortec
SENSOR FLIPCORE/HALL SPI 12WLCSP / Geomagnetic Sensor
Lowest to $0.7841
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess