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STGW10M65DF2

Part No STGW10M65DF2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description TRENCH GATE FIELD-STOP IGBT M SE / IGBT Trench Field Stop 650 V 20 A 115 W Through Hole TO-247-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series M
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 40 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A
Power - Max 115 W
Switching Energy 120µJ (on), 270µJ (off)
Input Type Standard
Gate Charge 28 nC
Td (on/off) @ 25°C 19ns/91ns
Test Condition 400V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr) 96 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number STGW10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16969
Standard Package 1,200
Win Source Part Number 1096883-STGW10M65DF2
Ultra Librarian 3D Model Ultra Librarian STGW10M65DF2 CAD Model

Description

STGW10M65DF2 - Trench Gate Field-Stop IGBT

The STGW10M65DF2 is a high-performance 650V IGBT developed by STMicroelectronics, designed to offer an optimal balance between conduction and switching losses. This advanced technology device is particularly suitable for applications requiring high efficiency and fast switching, such as power supplies, solar inverters, welding equipment, and motor drives.

Featuring a trench gate and field-stop structure, the STGW10M65DF2 provides a low on-voltage drop (VCE(sat)) and minimal energy losses during turn-off, making it an excellent choice for high-frequency operations. Its maximum collector current (IC) of 10A at a temperature of 25°C ensures reliable performance even under high load conditions.

The robust design of this IGBT includes a co-packaged fast recovery diode, which significantly reduces the turn-off energy and recovery time. This integrated diode is optimized for the IGBT's switching characteristics, enhancing the overall efficiency of the system and reducing the need for additional external components.

Key features of the STGW10M65DF2 include:

  • Maximum collector-emitter voltage (VCE) of 650V
  • Low saturation voltage of 1.85V (typical) at IC=10A
  • High-speed switching with a maximum of 30 kHz switching frequency
  • High junction temperature capability (Tj) up to 175°C
  • Low total gate charge (Qg) for reduced driving losses
  • Short-circuit withstand time of 5 µs
  • Co-packaged with a fast recovery anti-parallel diode

STMicroelectronics has designed the STGW10M65DF2 with an emphasis on reliability and performance, ensuring that it meets the stringent requirements of modern power electronic systems. Its package is engineered for optimal thermal performance, which, combined with its advanced electrical characteristics, makes it a powerful and versatile component for a wide range of high-power applications.

Whether you are designing an energy-efficient inverter or a robust motor control system, the STGW10M65DF2 provides the performance and reliability needed to deliver top-notch results in a compact, energy-conscious design.

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