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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2V @ 15V, 30A
Maximum Power Dissipation 260W
Total Switching Energy(Ets) 383μJ (on), 293μJ (off)
Input Type Standard
Gate Charge 149nC
Turn-on and Turn-off delay time 37ns/146ns
Testing Conditions 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr) 53ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 143658-STGW30H60DFB
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGW30H60DFB CAD Model

Description

STGW30H60DFB - IGBT from STMicroelectronics

The STGW30H60DFB is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics, a global leader in semiconductor solutions. This IGBT is designed to handle a wide range of high-power applications, particularly those requiring high efficiency and fast switching. It is well-suited for applications such as motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.

Key Features

  • High Current Capability: The STGW30H60DFB can handle a continuous collector current (I<sub>C) of up to 60A, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage (V<sub>CE) of 600V, this IGBT can be used in circuits that experience high voltage stress.
  • Low On-State Voltage Drop (V<sub>CE(sat)): The device offers a low saturation voltage drop, which enhances efficiency by reducing conduction losses.
  • Fast Switching Speed: The STGW30H60DFB features a fast switching speed, which is crucial for reducing switching losses and improving overall performance in high-frequency applications.
  • Co-packaged with Free Wheeling Diode: This IGBT comes with an integrated fast recovery diode, which provides protection against reverse voltage transients and reduces the number of external components required.
  • High Ruggedness: The device is designed to withstand harsh operating conditions, ensuring reliability and a long operational life.

Applications

  • Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Welding Equipment
  • High-Frequency Converters and Inverters

The STGW30H60DFB from STMicroelectronics represents a blend of advanced semiconductor technology with robust design, making it an ideal choice for designers who require a high-performing IGBT for their power management and conversion applications. Its combination of high current capability, low on-state voltage, and fast switching characteristics makes it a versatile component that can significantly enhance the efficiency and reliability of a wide array of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.1556 $56.7116
27+ $4.2302 $114.2154
41+ $4.0981 $168.0221
57+ $3.9658 $226.0506
74+ $3.8336 $283.6864
98+ $3.4371 $336.8358
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 60 pieces
MOQ: 11 pcs
Order Increment : 600 pieces
*Need More Quantity? *Request a Bulk Quantity Quotation?

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