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Same model may have multiple batches, images only for reference.
IHW30N120R3FKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IHW30N120R3FKSA1

Part No IHW30N120R3FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 60A 349W TO247-3 / Trans IGBT Chip N-CH 1200V 60A 349000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
IHW30N120R3FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series TrenchStop
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 60A
Current - Collector Pulsed (Icm) 90A
Vce(on) (Maximum) @ Vge, Ic 1.75V @ 15V, 30A
Power - Max 349W
Switching Energy 1.47mJ (off)
Input Type Standard
Gate Charge 263nC
Td (on/off) @ 25°C -/326ns
Test Condition 600V, 30A, 10 Ohm, 15V
Operating Temperature Range -40°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247-3
Win Source Part Number 776726-IHW30N120R3FKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IHW30N120R3
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IHW30N120R3FKSA1 CAD Model

Description

The Infineon Technologies IHW30N120R3FKSA1 is a MOSFET transistor that comes in a TO-247-3 package.

  • Voltage Rating: 1200V
  • Current Rating: 60A
  • Switching Energy: 1.47mJ
  • Gate Charge: 263nC
  • Halogen-Free: Yes
  • Popularity: Medium
  • Manufactured In: China
  • Status: Obsolete/End of Life

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