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Same model may have multiple batches, images only for reference.
IKW50N65WR5XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IKW50N65WR5XKSA1

Part No IKW50N65WR5XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 650V 80A 305W PG-TO247-3 / Trans IGBT Chip N-CH 650V 80A 282000mW 3-Pin(3+Tab) TO-247 Tube
Datasheet
IKW50N65WR5XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series TrenchStop
Packaging Reel package
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 150A
Vce(on) (Maximum) @ Vge, Ic 1.8V @ 15V, 50A
Power - Max 282W
Switching Energy 840μJ (on), 220μJ (off)
Input Type Standard
Gate Charge 230nC
Td (on/off) @ 25°C 45ns/417ns
Test Condition 400V, 25A, 16 Ohm, 15V
Reverse Recovery Time (trr) 110ns
Operating Temperature Range -40°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package PG-TO247-3
Win Source Part Number 776740-IKW50N65WR5XKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IKW50N65WR5
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian IKW50N65WR5XKSA1 CAD Model

Description

The Infineon Technologies IKW50N65WR5XKSA1 is a TrenchStop IGBT type device.

  • Maximum Power: 282W
  • Maximum Voltage Collector-Emitter Breakdown: 650V
  • Temperature Range: -40°C to 175°C
  • Package: TO-247-3
  • Mounting: Through-hole
  • Maximum Collector Current: 150A
  • Switching Energy: 840μJ (on) and 220μJ (off)
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 45ns/417ns
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Estimated EOL Date: 2028

The device is ideal for use in discrete semiconductor products.

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