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FGH40N6S2

Part No FGH40N6S2
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 600V, SMPS II Series N-Channel IGBT | IGBT 600V 75A 290W TO247
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 75A
Current - Collector Pulsed (Icm) 180A
Vce(on) (Maximum) at Vge, Ic 2.7V at 15V, 20A
Maximum Power 290W
Switching Energy 115μJ (on), 195μJ (off)
Input Type Standard
Gate Charge 35nC
Td (on/off) at 25°C 8ns/35ns
Test Condition 390V, 20A, 3Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247-3
Manufacturer Pack Quantity 150
MSL Level 1 (Unlimited)
Win Source Part Number 1174190-FGH40N6S2
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FGH40N6S2 CAD Model

Description

The FGH40N6S2 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor, renowned for its proficiency in power management and semiconductor solutions. This IGBT is designed to cater to a wide range of applications, including but not limited to, motor drives, uninterruptible power supplies (UPS), and inverter circuitry for renewable energy sources.

Key Features

  • Voltage Rating: The FGH40N6S2 is rated for a collector-to-emitter voltage of 600V, making it suitable for medium to high voltage applications.
  • Current Capacity: It can handle a continuous collector current of up to 40A at 25°C, ensuring robust performance for heavy-load conditions.
  • High Switching Speed: The device boasts a fast switching speed, which is essential for high-frequency operations and contributes to the efficiency of the overall system.
  • Low Saturation Voltage: With a low VCE(sat), the FGH40N6S2 minimizes conduction losses, thereby improving thermal performance and reliability.
  • Co-Packaged Diode: This IGBT comes with a co-packaged fast recovery diode, which provides protection against reverse voltage and reduces component count in circuit design.

Performance and Reliability

The FGH40N6S2 IGBT from ON Semiconductor is designed to deliver high efficiency and reliability. It features a robust and durable construction that can withstand the demanding conditions of industrial environments. The device's high energy efficiency reduces power loss and heat generation, which in turn extends the life of the product and the systems in which it is used.

Applications

With its versatile characteristics, the FGH40N6S2 is well-suited for a variety of applications. It is particularly effective in AC and DC motor drives, where precise control and efficiency are paramount. Additionally, its high-speed switching capability makes it an excellent choice for power supply units and inverter applications in solar and wind energy systems.

Conclusion

The FGH40N6S2 from ON Semiconductor is a testament to the company's commitment to providing high-quality, energy-efficient solutions for power management challenges. Its combination of high voltage and current ratings, along with fast switching and low saturation voltage, makes it a reliable and efficient choice for designers and engineers looking to optimize their power systems.

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