The APT40GR120B2SCD10 is a single IGBT transistor in the TO-247-3 package.

• GPTDescription: It is designed for high power applications with a maximum power rating of 500W.
• GPTDescription: The IGBT type is NPT, which stands for Non-Punch Through, and it has a collector-emitter breakdown voltage of 1200V.
• GPTDescription: The maximum collector current is 88A, with a pulsed current rating of 160A.
• GPTDescription: The voltage drop across the collector-emitter junction is 3.2V @ a gate-emitter voltage of 15V and a collector current of 40A.
• GPTDescription: The switching energy is 929μJ for turn-on and 1070μJ for turn-off.
• GPTDescription: The gate charge is 210nC, and the on/off delay times are 20ns and 166ns, respectively.
• GPTDescription: The operating temperature range is -55°C to 150°C.
• GPTDescription: This product is supplied in a tube package with 30 pieces.