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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Microchip Technology
Series POWER MOS 7®
Package Tube
Product Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 113 A
Current - Collector Pulsed (Icm) 170 A
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 45A
Power - Max 625 W
Switching Energy 900µJ (on), 905µJ (off)
Input Type Standard
Gate Charge 185 nC
Td (on/off) @ 25°C 18ns/100ns
Test Condition 600V, 45A, 5Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Base Product Number APT45GP120
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 564095-APT45GP120B2DQ2G
Ultra Librarian 3D Model Ultra Librarian APT45GP120B2DQ2G CAD Model

Description

Introducing the APT45GP120B2DQ2G from Microchip Technology

The APT45GP120B2DQ2G is a state-of-the-art power semiconductor device designed by Microchip Technology, a leader in the field of smart, connected, and secure embedded control solutions. This advanced product is part of Microchip's extensive portfolio of power electronics that cater to a wide range of applications, including industrial, automotive, consumer, aerospace, and telecommunications.

This particular device is an IGBT - Insulated Gate Bipolar Transistor, which is a type of power transistor that combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The APT45GP120B2DQ2G is a high-performance IGBT designed for efficiency and reliability in high-power switching applications.

Key Features of APT45GP120B2DQ2G

  • Voltage Rating: The device is rated for a collector-emitter voltage of 1200V, making it suitable for high-voltage applications.
  • Current Capability: It supports a continuous collector current of up to 45A at 25°C, ensuring robust performance for heavy-duty operations.
  • Low On-Resistance: The low on-state voltage reduces conduction losses, enhancing overall system efficiency.
  • High-Speed Switching: With fast switching capabilities, the APT45GP120B2DQ2G can improve performance in converters and inverters.
  • Ruggedness: The device is designed to withstand harsh conditions, making it reliable for industrial environments.
  • Package: Housed in a DQ2G package, the IGBT offers a compact form factor while maintaining good thermal characteristics.

Microchip Technology's APT45GP120B2DQ2G is optimized for applications that require high efficiency, such as motor drives, uninterruptible power supplies (UPS), solar inverters, and induction heating systems. Its robust design ensures a long operational life and reduced maintenance costs, making it a valuable component for designers seeking to enhance their power management systems.

With Microchip's commitment to quality, the APT45GP120B2DQ2G is manufactured to meet the highest standards of performance and reliability. Whether you're developing a new power system or upgrading an existing one, this IGBT is an excellent choice for achieving top-tier efficiency and durability.

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