The 145263-HGT1S20N60C3R is a single IGBT transistor designed for discrete semiconductor applications. It has a maximum power rating of 164W and a collector-emitter breakdown voltage of 600V. With a maximum collector current of 40A and a pulsed collector current of 80A, this IGBT can handle high power applications with ease. The 145263-HGT1S20N60C3R has a low on-state voltage drop of 2.2V at 15V gate-emitter voltage and 20A collector current. It features a through-hole mounting style and is available in a TO-262-3 package. Manufactured by Harris Corporation, this IGBT is an active and reliable component for your power electronics projects.