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Same model may have multiple batches, images only for reference.
SGD06N60BUMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SGD06N60BUMA1

Part No SGD06N60BUMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 12A 68W TO252-3
Datasheet
SGD06N60BUMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 12A
Pulsed Collector Current 24A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 6A
Maximum Power Dissipation 68W
Total Switching Energy(Ets) 215μJ
Input Type Standard
Gate Charge 32nC
Turn-on and Turn-off delay time 25ns/220ns
Testing Conditions 400V, 6A, 50 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Win Source Part Number 1095585-SGD06N60BUMA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian SGD06N60BUMA1 CAD Model

Description

The Infineon Technologies 1095585-SGD06N60BUMA1 is an NPT-type IGBT transistor with a maximum collector current of 12A and a maximum collector-emitter breakdown voltage of 600V.

  • Maximum Collector Current: 12A
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Gate Charge: 32nC
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: PG-TO252-3
  • Mounting Type: SMD
  • Maximum Power Dissipation: 68W
  • Pulsed Collector Current: 24A
  • Total Switching Energy: 215μJ
  • Turn-On and Turn-Off Delay Time: 25ns/220ns
  • Status: Obsolete (EOL)
  • Package Type: Reel - TR
  • Supply and Demand Status: Balanced
  • Package Quantity: 2,500 Transistors

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