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STGWA30IH65DF

Part No STGWA30IH65DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description TRENCH GATE FIELD-STOP 650 V, 30 / IGBT Trench Field Stop 650 V 60 A 180 W Through Hole TO-247 Long Leads
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr STMicroelectronics
Series IH
Package Tube
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 90 A
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 30A
Power - Max 180 W
Switching Energy 123µJ (off)
Input Type Standard
Gate Charge 80 nC
Td (on/off) @ 25°C -/200ns
Test Condition 400V, 30A, 22Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA30
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1353922-STGWA30IH65DF
Ultra Librarian 3D Model Ultra Librarian STGWA30IH65DF CAD Model

Description

STGWA30IH65DF - High-Efficiency IGBT from STMicroelectronics

The STGWA30IH65DF is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a global semiconductor leader known for its commitment to delivering energy-efficient and performance-driven solutions. This IGBT is designed to meet the demanding requirements of a wide range of power applications, offering a perfect blend of low conduction and switching losses.

Featuring a maximum collector current of 60A and a collector-emitter voltage of 650V, the STGWA30IH65DF is optimized for high-efficiency applications. Its co-packaged freewheeling diode ensures fast recovery, which is particularly beneficial in reducing electromagnetic interference (EMI) and improving system reliability.

One of the key attributes of the STGWA30IH65DF is its trench gate field-stop technology. This advanced design minimizes on-state voltage drop (VCE(sat)) and enhances the device's switching performance. As a result, the IGBT is well-suited for applications such as solar inverters, uninterruptible power supplies (UPS), motor drives, and high-performance power converters, where efficiency is paramount.

The device is housed in a TO-247 long leads package, which offers excellent thermal performance and is compatible with a wide range of heatsink options. This packaging also facilitates easier mounting on a printed circuit board (PCB) and provides ample space for optimal heat dissipation, ensuring the device operates within its specified temperature range even under high power conditions.

The STGWA30IH65DF also boasts a high short-circuit withstand time, rated at 10μs, which contributes to the overall robustness and longevity of the component. This feature is crucial for protecting the device and the system in the event of an unexpected power surge or fault condition.

With its high efficiency, robust performance, and reliability, the STGWA30IH65DF from STMicroelectronics is an excellent choice for designers looking to improve the performance and energy efficiency of their power management systems. By integrating this IGBT into their designs, engineers can expect reduced system costs, enhanced system reliability, and a smaller ecological footprint due to lower energy losses.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2217 $66.6510
65+ $1.8230 $118.4950
100+ $1.7660 $176.6000
140+ $1.7091 $239.2740
175+ $1.6520 $289.1000
235+ $1.4812 $348.0820
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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