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STGW60H65F

Part No STGW60H65F
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 650V 80A 375W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 650V
Maximum Current Collector 80A
Pulsed Collector Current 240A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 60A
Maximum Power Dissipation 375W
Total Switching Energy(Ets) 1.09mJ (on), 626μJ (off)
Input Type Standard
Gate Charge 306nC
Turn-on and Turn-off delay time 51ns/160ns
Testing Conditions 400V, 60A, 5 Ohm, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 066388-STGW60H65F
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Alternative Energy, Power Management, Maintenance & Repair
Ultra Librarian 3D Model Ultra Librarian STGW60H65F CAD Model

Description

The STGW60H65F is a cutting-edge IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics, designed to offer a blend of high efficiency and robust performance for a wide range of power applications. This device is part of the STPOWER product line, which is renowned for its high-quality power semiconductors.

Key Features

  • High Current Capability: With a rated current of 60A, the STGW60H65F can handle high power applications with ease.
  • High Voltage Tolerance: This IGBT is rated for a collector-emitter voltage of 650V, making it suitable for high voltage circuits.
  • Low On-State Voltage Drop (V<sub>CE(sat)): The low on-state voltage drop ensures higher efficiency and reduced power losses during operation.
  • Short Circuit Rating: It features a short-circuit withstand time of 10 µs, providing robustness and reliability in adverse conditions.
  • High Switching Speed: The fast switching characteristics of the STGW60H65F make it ideal for high-frequency applications.
  • Co-Packaged Free-Wheeling Diode: The inclusion of a co-packaged free-wheeling diode allows for efficient switching and reduced electromagnetic interference (EMI).

Applications

The versatility of the STGW60H65F IGBT allows it to be used in a variety of power applications including:

  • Uninterruptible Power Supplies (UPS)
  • Welding Equipment
  • Solar Inverters
  • Motor Drives
  • Power Factor Correction (PFC) Circuits

Advanced Technology

STMicroelectronics has integrated advanced technology into the STGW60H65F to ensure superior performance. The device utilizes the latest generation of trench gate field-stop technology, which enhances its switching performance and energy efficiency. This technology also contributes to the IGBT's low thermal resistance, allowing for better heat dissipation and increased reliability.

Environmental and Quality Certifications

The STGW60H65F is manufactured with a commitment to environmental sustainability and quality. It complies with various international standards, ensuring that it meets the rigorous demands of industrial and consumer electronics.

For detailed specifications, application notes, and additional resources, designers and engineers are encouraged to consult the datasheet and technical documentation available on the STMicroelectronics website.

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