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STGW50H60DF

Part No STGW50H60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description 50 A, 600 V field stop trench gate IGBT with Ultrafast diode
Datasheet
Sample
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Part Status Obsolete(EOL)
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 100A
Current - Collector Pulsed (Icm) 200A
Vce(on) (Maximum) @ Vge, Ic 1.8V @ 15V, 50A
Power - Max 360W
Switching Energy 890μJ (on), 860μJ (off)
Input Type Standard
Gate Charge 217nC
Td (on/off) @ 25°C 62ns/178ns
Test Condition 400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr) 55ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 1261051-STGW50H60DF
Manufacturer Homepage www.st.com
Family Name STGW50H60DF
Introduction Date April 28, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGW50H60DF CAD Model

Description

STGW50H60DF - IGBT - STMicroelectronics

The STGW50H60DF is a state-of-the-art insulated gate bipolar transistor (IGBT) developed by STMicroelectronics, a leader in semiconductor solutions. This high-speed IGBT is designed to handle a wide range of applications, particularly those requiring high efficiency and fast switching. It is a member of STMicroelectronics' PowerMESH™ family, which is renowned for its excellent trade-off between switching performance and on-state behavior, making it suitable for a variety of power applications.

With a collector-emitter voltage (V<sub>CE) of 600V and a collector current rating of 50A, the STGW50H60DF is capable of managing significant power levels. The device is optimized for use in high-performance power conversion systems such as inverters, converters, and power supplies used in consumer electronics, industrial, and automotive applications.

The STGW50H60DF features a robust and innovative trench gate field-stop structure. This technology provides a low on-state voltage drop (V<sub>CE(sat)) which reduces conduction losses and improves overall efficiency. Additionally, the device offers excellent switching performance, with a fast and soft recovery anti-parallel diode that minimizes electromagnetic interference (EMI) and enhances performance in hard-switching conditions.

Other key features of the STGW50H60DF include a high current capability, tight parameter distribution, and a co-packaged freewheeling diode with a low forward voltage drop. These characteristics make the IGBT well-suited for applications requiring high reliability and power density.

The STGW50H60DF is housed in a TO-247 long leads package, which provides excellent thermal performance and is compatible with standard assembly processes. The package is designed to withstand rugged environmental conditions, ensuring reliable operation even in harsh industrial environments.

Overall, the STGW50H60DF from STMicroelectronics is a high-performance IGBT that offers a combination of efficiency, speed, and power handling capability. It is an ideal choice for designers looking to enhance the performance of their power management systems while maintaining cost-effectiveness and reliability.

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Availability: 1,600 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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