STGF14N60D - N-channel 600 V, 14 A, Fast Recovery Diode Field Effect Transistor (FRD FET) from STMicroelectronics

The STGF14N60D is a high-performance N-channel 600 V, 14 A, Fast Recovery Diode Field Effect Transistor (FRD FET) designed and manufactured by STMicroelectronics. This advanced power MOSFET is tailored to deliver efficient switching performance and enhanced power handling capabilities, making it an ideal choice for a wide range of high-voltage applications.

Constructed with state-of-the-art MDmesh™ technology, the STGF14N60D boasts a low on-resistance (R<sub>DS(on)) and reduced gate charge (Q<sub>g), which translates to lower conduction and switching losses. This technology enables the device to achieve high efficiency in power conversion, ensuring optimal performance in applications such as switch-mode power supplies, lighting, welding, and high-frequency converters.

One of the standout features of the STGF14N60D is its fast recovery diode. This integrated diode is specifically designed to minimize reverse recovery time (t<sub>rr) and reverse recovery charge (Q<sub>rr), which significantly reduces switching losses and noise, improving overall system reliability and performance, especially in hard-switching conditions.

The device is encapsulated in a TO-220 FullPAK package, which offers excellent thermal performance and simplifies the assembly process. The package is designed to withstand high operating temperatures, ensuring the MOSFET's stability and longevity under various environmental conditions.

Key features of the STGF14N60D include:

• 600 V drain-source breakdown voltage (V<sub>DSS)
• 14 A continuous drain current (I<sub>D)
• Low threshold voltage (V<sub>GS(th)) for ease of drive
• High dv/dt capability ensuring robustness against harsh conditions
• 100% avalanche tested for guaranteed reliability

Overall, the STGF14N60D from STMicroelectronics represents a robust and efficient solution for designers looking to enhance the performance of their high-voltage power applications. Its integration of a fast recovery diode within the MOSFET structure provides a compact, high-performance, and reliable component that meets the stringent demands of modern electronic systems.