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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 60A
Current - Collector Pulsed (Icm) 100A
Vce(on) (Maximum) at Vge, Ic 2.5V at 15V, 20A
Maximum Power 200W
Switching Energy 220μJ (on), 330μJ (off)
Input Type Standard
Gate Charge 100nC
Td (on/off) at 25°C 31ns/100ns
Test Condition 390V, 20A, 3.3Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247-3
Family Part Number STG*20NC
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1261040-STGW20NC60V
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Motor Drive & Control, Industrial
Ultra Librarian 3D Model Ultra Librarian STGW20NC60V CAD Model

Description

STGW20NC60V - IGBT from STMicroelectronics

The STGW20NC60V is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics, a leader in the semiconductor industry. This IGBT is designed to meet the demanding needs of a wide range of power electronics applications, including motor drives, uninterruptible power supplies (UPS), inverter systems, and more. It offers an outstanding combination of high efficiency, fast switching speeds, and robust thermal performance.

Key Features

  • Voltage Ratings: The STGW20NC60V is rated for a collector-emitter voltage of 600V, making it suitable for high-voltage applications.
  • Current Handling: With a continuous collector current rating of 20A at 25°C, this IGBT can handle significant power levels.
  • Low On-State Voltage Drop: The device features a low on-state voltage drop (V<sub>CE(sat)) which enhances its efficiency by minimizing conduction losses.
  • High-Speed Switching: The fast switching characteristics of the STGW20NC60V enable efficient operation at high frequencies, which is critical for reducing the size of passive components in power circuits.
  • Co-Packaged Diode: It comes with a co-packaged fast recovery diode, which provides efficient freewheeling functionality and simplifies circuit design.

Advanced Technology

The STGW20NC60V utilizes STMicroelectronics' advanced IGBT technology, which incorporates a trench gate field-stop structure. This design provides an optimal trade-off between switching performance and on-state behavior, which is crucial for high-efficiency power conversion.

Thermal Management

Thermal management is a critical aspect of power device performance. The STGW20NC60V is encapsulated in a TO-247 long leads package, which offers excellent thermal conduction properties. This package allows for effective heat dissipation, ensuring the IGBT operates within safe temperature limits under various conditions.

Applications

The versatility of the STGW20NC60V allows it to be used across various high-power applications. Its robustness and reliability make it an ideal choice for designers looking to enhance system performance while ensuring longevity and stability.

Conclusion

Overall, the STGW20NC60V from STMicroelectronics represents a state-of-the-art IGBT solution for power electronics engineers. Its superior electrical characteristics and thermal performance make it a go-to component for those seeking to optimize their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.6412 $60.3356
30+ $3.8081 $114.2430
46+ $3.6891 $169.6986
63+ $3.5701 $224.9163
82+ $3.4511 $282.9902
109+ $3.0941 $337.2569
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 9,600 pieces
MOQ: 13 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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