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Same model may have multiple batches, images only for reference.
SKP02N120XKSA1
Same model may have multiple batches, images only for reference.

SKP02N120XKSA1

Part No SKP02N120XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 6.2A 62W TO220-3
Datasheet
SKP02N120XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Tube
Product Status Last Time Buy
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 6.2 A
Current - Collector Pulsed (Icm) 9.6 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 2A
Power - Max 62 W
Switching Energy 220µJ
Input Type Standard
Gate Charge 11 nC
Td (on/off) @ 25°C 23ns/260ns
Test Condition 800V, 2A, 91Ohm, 15V
Reverse Recovery Time (trr) 50 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Base Product Number SKP02N
Standard Package 500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 849561-SKP02N120XKSA1
Ultra Librarian 3D Model Ultra Librarian SKP02N120XKSA1 CAD Model

Description

The SKP02N120XKSA1 is a single IGBT transistor designed for use in discrete semiconductor products by Infineon Technologies.

  • Power Rating: 62W
  • Reverse Recovery Time: 50ns
  • IGBT Type: NPT
  • Collector-Emitter Breakdown Voltage: 1200V
  • Collector Current: 6.2A
  • Pulsed Collector Current: 9.6A
  • Vce(on): 3.6V @ a gate-emitter voltage of 15V and a collector current of 2A
  • Switching Energy: 220µJ
  • Gate Charge: 11nC
  • On/Off Delay Time: 23ns/260ns @ 25°C
  • Mounting: Through-hole
  • Package: TO-220-3
  • Operating Temperature Range: -55°C to 150°C

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