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Same model may have multiple batches, images only for reference.
IRG4BC15UD Real Image
Same model may have multiple batches, images only for reference.

IRG4BC15UD

Part No IRG4BC15UD
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) | IGBT 600V 14A 49W TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 14A
Current - Collector Pulsed (Icm) 42A
Vce(on) (Maximum) at Vge, Ic 2.4V at 15V, 7.8A
Maximum Power 49W
Switching Energy 240μJ (on), 260μJ (off)
Input Type Standard
Gate Charge 23nC
Td (on/off) at 25°C 17ns/160ns
Test Condition 480V, 7.8A, 75Ohm, 15V
Reverse Recovery Time (trr) 28ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188218-IRG4BC15UD
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4BC15UD CAD Model

Description

The Infineon Technologies 1188218-IRG4BC15UD is a through-hole mounting style IGBT transistor.

  • Reverse Recovery Time: 28ns
  • Current-Collector Pulsed (Icm): 42A
  • Switching Energy: 240μJ (on) and 260μJ (off)
  • Input Type: standard
  • Gate Charge: 23nC
  • Test Condition: 480V, 7.8A, 75Ohm, 15V
  • Maximum Power: 49W
  • Vce(on) (Maximum) @ Vge, Ic: 2.4V @ 15V, 7.8A
  • Td (on/off) @ 25°C: 17ns/160ns
  • Package: TO-220AB
  • Voltage - Collector Emitter Breakdown (Maximum): 600V
  • Status: obsolete
  • Supply and Demand Status: limited

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