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IRG4BC30W

Part No IRG4BC30W
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) | IGBT 600V 23A 100W TO220AB
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 23A
Current - Collector Pulsed (Icm) 92A
Vce(on) (Maximum) at Vge, Ic 2.7V at 15V, 12A
Maximum Power 100W
Switching Energy 130μJ (on), 130μJ (off)
Input Type Standard
Gate Charge 51nC
Td (on/off) at 25°C 25ns/99ns
Test Condition 480V, 12A, 23Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3
Supplier Device Package TO-220AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188245-IRG4BC30W
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRG4BC30W CAD Model

Description

The Infineon Technologies IRG4BC30W is an IGBT transistor with a TO-220AB package.

  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power: 100W
  • Collector Current: 23A
  • Gate Charge: 51nC
  • Operating Temperature Range: -55°C to 150°C
  • Switching Energy: 130μJ (on), 130μJ (off)
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 50
  • Alternative Parts: including SGP23N60UFTU, IRGBC30KD2, IRG4BC30UD, and IRG4BC30W.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4079 $63.3555
100+ $1.1550 $115.5000
155+ $1.1192 $173.4760
215+ $1.0834 $232.9310
280+ $1.0476 $293.3280
370+ $0.9390 $347.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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