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NGTB30N120L2WG

Part No NGTB30N120L2WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 60A 534W TO247 / IGBT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Series *
Package Tube
Product Status Active
Base Product Number NGTB30
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1022268-NGTB30N120L2WG
Ultra Librarian 3D Model Ultra Librarian NGTB30N120L2WG CAD Model

Description

Introducing the NGTB30N120L2WG IGBT from ON Semiconductor

The NGTB30N120L2WG is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance IGBT is tailored for a wide range of power applications, offering a perfect balance between switching speed and on-state loss, making it an ideal choice for high-efficiency power systems.

Key Features

  • High Current Capability: The NGTB30N120L2WG is capable of handling continuous collector currents up to 30A, making it suitable for heavy-duty applications.
  • Low On-State Voltage: It features a low collector-emitter saturation voltage of typically 2.05V, minimizing conduction losses and improving overall system efficiency.
  • Fast Switching Speed: With a fast switching speed, this IGBT reduces switching losses and enables high-frequency operation, which is essential for applications such as inverters and converters.
  • Co-Packaged Free Wheeling Diode: The inclusion of a co-packaged fast recovery diode ensures efficient free-wheeling operation, further reducing power dissipation and enhancing performance.
  • High Temperature Operation: It is designed to operate reliably at junction temperatures up to 175°C, ensuring stability and longevity in demanding conditions.

Applications

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Power Inverters
  • Inductive Heating
  • Renewable Energy Systems

The NGTB30N120L2WG offers a robust design with a low thermal resistance, housed in a TO-247-3 package that ensures excellent heat dissipation and easy integration into a variety of circuit designs. Its superior performance characteristics are a result of ON Semiconductor's cutting-edge IGBT technology, which focuses on delivering high efficiency and reliability to meet the demands of modern power electronic systems.

Whether you're developing energy-saving solutions or looking for components that offer precise control in power management systems, the NGTB30N120L2WG from ON Semiconductor provides the quality and performance that engineers and designers can rely on. With its advanced features and proven durability, this IGBT is set to be a key component in driving the future of power electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.4243 $62.1215
12+ $10.1944 $122.3328
18+ $9.8759 $177.7662
25+ $9.5573 $238.9325
32+ $9.2386 $295.6352
42+ $8.2830 $347.8860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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