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STGP15H60DF

Part No STGP15H60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 30A 115W TO220 / Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-220AB Tube
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 30A
Current - Collector Pulsed (Icm) 60A
Vce(on) (Maximum) @ Vge, Ic 2V @ 15V, 15A
Power - Max 115W
Switching Energy 136μJ (on), 207μJ (off)
Input Type Standard
Gate Charge 81nC
Td (on/off) @ 25°C 24.5ns/118ns
Test Condition 400V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr) 103ns
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-220-3
Manufacturer Package TO-220
Win Source Part Number 795617-STGP15H60DF
Popularity Medium
Supply and Demand Status Limited
Family Name STGP15H60DF
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian STGP15H60DF CAD Model

Description

STGP15H60DF - IGBT from STMicroelectronics

The STGP15H60DF is a high-performance insulated gate bipolar transistor (IGBT) designed by STMicroelectronics, a global semiconductor leader renowned for its innovative and reliable products. The STGP15H60DF is part of STMicroelectronics' advanced IGBT portfolio, which is engineered to deliver superior efficiency, robustness, and reliability in a wide range of power applications.

This IGBT features a maximum collector-emitter voltage (V<sub>CE) of 600V, making it suitable for applications that require high voltage handling capability. The device is capable of supporting a continuous collector current (I<sub>C) of up to 15A at 25°C, with a low on-state voltage drop, which contributes to its high efficiency. The STGP15H60DF is designed to operate at high switching frequencies, which makes it an excellent choice for high-efficiency converters and inverters.

The device utilizes STMicroelectronics' proprietary trench gate field-stop technology, which provides an optimal balance between conduction and switching losses. This technology enables the IGBT to achieve excellent thermal performance and enhanced power cycling capability, which is critical for ensuring longevity and reliability in demanding applications.

Furthermore, the STGP15H60DF offers a co-packaged ultrafast soft recovery diode, which minimizes switching losses and reduces electromagnetic interference (EMI). This feature is particularly beneficial in applications where noise reduction and efficiency are of paramount importance, such as in motor drives, uninterruptible power supplies (UPS), and solar inverters.

The device is housed in a TO-220 package, which is widely used in the industry and known for its good thermal performance and ease of mounting. This packaging allows for efficient heat dissipation and simplifies the integration of the IGBT into a variety of circuit designs.

In summary, the STGP15H60DF from STMicroelectronics is a robust and high-performance IGBT that offers excellent efficiency, reliability, and thermal performance for a broad range of power applications. Its advanced features and proven technology make it a top choice for designers seeking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.4997 $65.9988
8+ $13.5383 $108.3064
12+ $13.1152 $157.3824
16+ $12.6921 $203.0736
21+ $12.2691 $257.6511
28+ $10.9998 $307.9944
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MOQ: 4 pcs
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