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STGB6M65DF2

Part No STGB6M65DF2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series M
Package Tape & Reel (TR)
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 12 A
Current - Collector Pulsed (Icm) 24 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Power - Max 88 W
Switching Energy 36µJ (on), 200µJ (off)
Input Type Standard
Gate Charge 21.2 nC
Td (on/off) @ 25°C 15ns/90ns
Test Condition 400V, 6A, 22Ohm, 15V
Reverse Recovery Time (trr) 140 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number STGB6
Standard Package 2,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277366-STGB6M65DF2
Ultra Librarian 3D Model Ultra Librarian STGB6M65DF2 CAD Model

Description

The STGB6M65DF2 is a state-of-the-art power transistor manufactured by STMicroelectronics, designed to deliver high efficiency and performance in various power applications. This advanced device is part of the MDmesh™ M6 series, which features ST's proprietary super-junction technology that significantly reduces on-resistance and total switching losses.

The STGB6M65DF2 is a 650V, 6A N-channel MOSFET, making it ideal for high voltage applications that require a compact and efficient power management solution. Its robust design ensures reliable operation even under harsh conditions, and it is particularly well-suited for hard switching topologies such as PFC (Power Factor Correction) circuits, LLC resonant converters, and full-bridge or half-bridge converters.

One of the key features of the STGB6M65DF2 is its low gate charge (Qg), which enhances the switching performance and reduces the energy required to control the MOSFET. This characteristic, along with the device's low on-state resistance (Rds(on)), contributes to its overall energy-saving capabilities, making it an environmentally friendly choice for power supply designers.

The STGB6M65DF2 also boasts a high avalanche ruggedness, providing designers with a margin of safety in applications where unexpected voltage spikes may occur. This ruggedness, combined with the MOSFET's fast recovery diode, ensures that the device can handle high surge currents without suffering damage, increasing the reliability and longevity of the end product.

This MOSFET comes in a TO-263 (D2PAK) package, which is known for its excellent thermal characteristics. The package is designed to be easily mounted onto a printed circuit board (PCB) and provides good heat dissipation, which is critical for maintaining performance and preventing thermal runaway in high-power applications.

Overall, the STGB6M65DF2 from STMicroelectronics represents a cutting-edge solution for designers looking to improve the efficiency, reliability, and performance of their power systems. Its combination of advanced technology, robust design, and energy-saving features make it a top choice for a wide range of industrial, consumer, and computing applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.5272 $52.9080
35+ $2.8942 $101.2970
54+ $2.8037 $151.3998
74+ $2.7133 $200.7842
96+ $2.6228 $251.7888
128+ $2.3515 $300.9920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,120 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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