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IRG4PC50SDPBF

Name: IRG4PC50SDPBF
Brand: Infineon Technologies
SKU: 605595
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRG4PC50SDPBF
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE \| IGBT 600V 70A 200W TO247AC
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Status	Obsolete
Voltage - Collector Emitter Breakdown (Maximum)	600V
Current - Collector (Ic) (Maximum)	70A
Current - Collector Pulsed (Icm)	140A
Vce(on) (Maximum) at Vge, Ic	1.36V at 15V, 41A
Maximum Power	200W
Switching Energy	720μJ (on), 8.27mJ (off)
Input Type	Standard
Gate Charge	180nC
Td (on/off) at 25°C	33ns/650ns
Test Condition	480V, 41A, 5Ohm, 15V
Reverse Recovery Time (trr)	50ns
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Manufacturer Package	TO-247-3
Supplier Device Package	TO-247AC
Manufacturer Pack Quantity	25
MSL Level	1 (Unlimited)
Win Source Part Number	1188283-IRG4PC50SDPBF
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRG4PC50SDPBF CAD Model

Description

The Infineon Technologies IGBT (Insulated Gate Bipolar Transistor) is a high-performance electronic component designed for use in power electronics applications.

Current Collector Pulsed (Icm): 140A
Switching Energy (on): 720μJ
Switching Energy (off): 8.27mJ
Gate Charge: 180nC
Package: TO-247AC
Maximum Power Rating: 200W
Voltage Collector Emitter Breakdown (Maximum): 600V
Current Collector (Ic) (Maximum): 70A
Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
2+	$28.3112	$56.6224
5+	$23.2297	$116.1485
7+	$22.5038	$157.5266
10+	$21.7778	$217.7780
12+	$21.0519	$252.6228
16+	$18.8741	$301.9856

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 130 pieces

MOQ: 2 pcs

Order Increment : 1 pcs

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