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Same model may have multiple batches, images only for reference.
GT30J122A(STA1,E,D Toshiba Semiconductor and Storage – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

GT30J122A(STA1,E,D

Part No GT30J122A(STA1,E,D
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description 120W 30A 600V TO-3PN Single IGBTs RoHS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package TO-3PN
Pd - Power Dissipation 120W
Td(off) 500ns
Td(on) 300ns
Current - Collector(Ic) 30A
Collector-Emitter Breakdown Voltage (Vces) 600V
Input Capacitance(Cies) 2.5nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic) 6V
Vce Saturation(VCE(sat)) 2.8V@50A,15V
Collector Cut-Off Current (Ices) 1mA
Ultra Librarian 3D Model Ultra Librarian GT30J122A(STA1,E,D CAD Model

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