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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr STMicroelectronics
Series -
Package Bulk
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 86 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Power - Max 272 W
Switching Energy 910µJ (on), 580µJ (off)
Input Type Standard
Gate Charge 151 nC
Td (on/off) @ 25°C 28ns/115ns
Test Condition 400V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 92 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376597-STGWA50H65DFB2
Ultra Librarian 3D Model Ultra Librarian STGWA50H65DFB2 CAD Model

Description

STGWA50H65DFB2 - STMicroelectronics

The STGWA50H65DFB2 is a cutting-edge power semiconductor device manufactured by STMicroelectronics, a global leader in the semiconductor industry. This high-performance product is part of the MDmesh™ DM6 650V series, which is renowned for its super-junction MOSFET technology. The device is specifically designed to meet the demanding requirements of high-efficiency applications, making it an ideal choice for a wide range of power conversion systems.

The STGWA50H65DFB2 boasts a maximum drain-source voltage (V<sub>DS) of 650V, providing a robust solution for systems that experience high voltage stress. With a continuous drain current (I<sub>D) of 50A at 25°C, this MOSFET can handle significant power, making it suitable for heavy-duty operations. The device also offers a low on-resistance (R<sub>DS(on)) of only 0.065Ω, which minimizes conduction losses and enhances overall efficiency.

One of the key features of the STGWA50H65DFB2 is its fast-switching capability. This is critical for applications such as switch-mode power supplies (SMPS), LED lighting, solar inverters, and welding equipment, where switching speed directly impacts performance and energy savings. The device's gate charge (Q<sub>g) is optimized to achieve a balance between switching speed and ease of drive, ensuring that designers can achieve the desired performance without excessive complexity in the drive circuitry.

The STGWA50H65DFB2 is also characterized by its high ruggedness and reliability. It is engineered to withstand harsh operating conditions and provides enhanced immunity to the detrimental effects of hard switching. This durability translates to a longer lifespan for the end product, which is crucial for mission-critical applications where downtime is not an option.

STMicroelectronics has packaged the STGWA50H65DFB2 in a TO-247 long leads package, which offers excellent thermal performance and simplifies the mounting process. This package is widely used in high-power applications and is compatible with standard mounting techniques, making it easy for manufacturers to integrate the device into their designs.

In summary, the STGWA50H65DFB2 from STMicroelectronics represents a blend of efficiency, performance, and reliability, making it a top choice for designers looking to create high-performance power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.5688 $50.1192
22+ $4.5693 $100.5246
34+ $4.4265 $150.5010
47+ $4.2837 $201.3339
61+ $4.1409 $252.5949
81+ $3.7125 $300.7125
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 53,000 pieces
MOQ: 9 pcs
Order Increment : 1 piece
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