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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 160 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Power - Max 283 W
Switching Energy 363µJ (off)
Input Type Standard
Gate Charge 210 nC
Td (on/off) @ 25°C -/142ns
Test Condition 400V, 40A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Base Product Number STGW40
Other Names 497-14364,-497-14364
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277390-STGW40H60DLFB
Ultra Librarian 3D Model Ultra Librarian STGW40H60DLFB CAD Model

Description

STGW40H60DLFB - A High-Efficiency IGBT from STMicroelectronics

The STGW40H60DLFB is a state-of-the-art insulated gate bipolar transistor (IGBT) manufactured by STMicroelectronics, a global leader in semiconductor solutions. This IGBT is designed for a wide range of high-power applications, where efficiency and reliability are of paramount importance. With its robust construction and advanced technology, the STGW40H60DLFB offers an optimal balance between conduction and switching losses, making it an ideal choice for energy-saving and performance-demanding applications.

Key Features

  • Voltage & Current Ratings: The device is rated for a collector-emitter voltage of 600V, ensuring safe operation in high voltage environments. It also has a collector current rating of 40A at 25°C, making it capable of handling significant power levels.
  • Low On-State Voltage: The STGW40H60DLFB features a low on-state voltage (V<sub>CE(sat)) of typically 1.85V, which contributes to its high efficiency by minimizing conduction losses.
  • High-Speed Switching: With a fast switching speed, this IGBT can operate efficiently at high frequencies, which is beneficial for applications such as switching power supplies and motor drives.
  • Short-Circuit Rating: It is equipped with a short-circuit withstand time of 10µs, providing robust protection against sudden electrical faults and enhancing system reliability.
  • Co-Packaged Diode: The device includes a soft recovery anti-parallel diode, which reduces electromagnetic interference (EMI) and improves efficiency during the switching process.

Applications

The versatility of the STGW40H60DLFB allows it to be used in a variety of high-power applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Welding Equipment
  • Induction Heating Systems
  • Solar Inverters
  • High-Frequency Converters and Inverters

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STGW40H60DLFB IGBT is built to meet stringent quality standards, ensuring reliable performance in demanding conditions. It is designed with features that protect against overcurrent and overtemperature events, thereby extending the lifespan of the end application.

For designers and engineers looking for a robust, efficient, and high-performance IGBT, the STGW40H60DLFB from STMicroelectronics is an excellent choice that combines cutting-edge technology with practical design considerations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.9629 $59.5548
25+ $4.6489 $116.2225
38+ $4.4918 $170.6884
54+ $4.1777 $225.5958
70+ $4.0207 $281.4490
87+ $3.8636 $336.1332
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 50 pieces
MOQ: 12 pcs
Order Increment : 1 Stück
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