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STGW60V60DF

Part No STGW60V60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 80A 375W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 240A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 60A
Maximum Power Dissipation 375W
Total Switching Energy(Ets) 750μJ (on), 550μJ (off)
Input Type Standard
Gate Charge 334nC
Turn-on and Turn-off delay time 60ns/208ns
Testing Conditions 400V, 60A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) 74ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 1103071-STGW60V60DF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGW60V60DF CAD Model

Description

The STGW60V60DF is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics, a global semiconductor leader. This IGBT is part of STMicroelectronics' advanced power electronics range and offers a blend of low on-state voltage drop with high switching speed, making it ideal for a variety of power applications.

Key Features

  • Voltage & Current: The device is rated for a maximum collector-emitter voltage of 600V, and it can handle continuous collector current up to 60A at 25°C, which makes it suitable for handling high power levels in electronic circuits.
  • Low On-Resistance: It features a low saturation voltage (VCE(sat)) of typically 1.85V at 40A, ensuring high efficiency in power conversion and reduced energy losses during operation.
  • High-Speed Switching: The STGW60V60DF boasts a fast switching speed, which is critical for reducing switching losses and improving performance in applications such as inverters and converters.
  • Co-Packaged Free Wheeling Diode: It comes with an integrated fast recovery anti-parallel diode, which simplifies circuit design and enhances system reliability.
  • Robustness: The device is highly robust and features a maximum operating junction temperature of 175°C, allowing for reliable operation even under harsh conditions.

Applications

The STGW60V60DF is versatile and can be used in a wide range of applications, including:

  • Motor drives and controls
  • Uninterruptible power supplies (UPS)
  • Power factor correction (PFC) circuits
  • Inductive heating and welding equipment
  • Solar inverters and renewable energy systems

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STGW60V60DF is no exception and is designed to ensure long operational life and stable performance across its lifespan. With its advanced features and robust design, this IGBT is an excellent choice for designers looking to improve efficiency and reliability in their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7650 $52.5350
45+ $2.2687 $102.0915
69+ $2.1978 $151.6482
95+ $2.1269 $202.0555
122+ $2.0560 $250.8320
163+ $1.8433 $300.4579
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,689 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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