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STGW30M65DF2

Part No STGW30M65DF2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Power - Max 258 W
Switching Energy 300µJ (on), 960µJ (off)
Input Type Standard
Gate Charge 80 nC
Td (on/off) @ 25°C 31.6ns/115ns
Test Condition 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 140 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number STGW30
Other Names 497-16485-5
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277387-STGW30M65DF2
Ultra Librarian 3D Model Ultra Librarian STGW30M65DF2 CAD Model

Description

STGW30M65DF2 - Trench Gate Field-Stop IGBT

The STGW30M65DF2 is a high-performance 650V, 30A power IGBT from STMicroelectronics, designed using advanced Trench Gate Field-Stop technology. This IGBT is specifically engineered to offer an optimal trade-off between switching performance and on-state behavior, making it an excellent choice for a wide range of high-efficiency applications.

Key Features

  • High Voltage Capability: With a maximum rating of 650V, the STGW30M65DF2 is suitable for applications that require high voltage operation, ensuring reliability and robustness in harsh electrical environments.
  • High Current Rating: The device can handle continuous currents up to 30A, making it capable of driving high-power circuits and components.
  • Low On-Resistance: The low on-state voltage drop due to the low on-resistance of the device ensures high efficiency, which is critical for reducing thermal stress and improving system performance.
  • Fast Switching Speed: Trench Gate Field-Stop technology provides the STGW30M65DF2 with fast switching characteristics, minimizing switching losses and improving the overall efficiency of the application.
  • Co-Packaged Diode: The device includes a co-packaged free-wheeling diode with a low forward voltage drop, which further enhances the performance during switching and provides protection against reverse current.

Applications

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Control Systems
  • Inductive Heating
  • Welding Equipment

The STGW30M65DF2 is built to provide exceptional ruggedness and reliability, which is a hallmark of STMicroelectronics' IGBT portfolio. It is encapsulated in a TO-247 long leads package, which offers excellent thermal performance and is compatible with a wide range of heatsinks to ensure stable operation even under high thermal loads.

Whether you are designing an energy-efficient power supply or a high-torque motor control system, the STGW30M65DF2 offers a combination of features that can help you achieve a compact, efficient, and reliable design. With its high voltage and current capabilities, fast switching speeds, and robust construction, this IGBT is an ideal choice for engineers looking to push the boundaries of power electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.7896 $52.6856
23+ $4.4806 $103.0538
35+ $4.3261 $151.4135
50+ $4.0171 $200.8550
65+ $3.8626 $251.0690
81+ $3.7081 $300.3561
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 840 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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