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STGF20M65DF2

Part No STGF20M65DF2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT TRENCH 650V 40A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 650V
Maximum Current Collector 40A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 2V @ 15V, 20A
Maximum Power Dissipation 32.6W
Total Switching Energy(Ets) 140μJ (on), 560μJ (off)
Input Type Standard
Gate Charge 63nC
Turn-on and Turn-off delay time 26ns/108ns
Testing Conditions 400V, 20A, 12 Ohm, 15V
Reverse Recovery Time (trr) 166ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Win Source Part Number 1040944-STGF20M65DF2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STGF20M65DF2 CAD Model

Description

STGF20M65DF2 - Silicon Carbide Power MOSFET by STMicroelectronics

The STGF20M65DF2 is a state-of-the-art silicon carbide (SiC) power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This power MOSFET is a part of ST's advanced SiC product line, which is renowned for its superior efficiency, reliability, and thermal performance compared to traditional silicon MOSFETs.

With a voltage rating of 650V and a current rating of 20A, the STGF20M65DF2 is well-suited for high-performance power conversion applications. Its low on-resistance of 65mΩ (max) at 25°C ensures minimal conduction losses, making it an excellent choice for applications such as electric vehicle (EV) chargers, solar inverters, and switch-mode power supplies.

The STGF20M65DF2 boasts a robust and rugged design with a high threshold voltage that reduces the risk of unintended turn-on due to noise, thus improving system reliability. Additionally, it features a fast intrinsic diode with low reverse recovery charge (Qrr), which is critical for reducing switching losses and improving the efficiency of high-frequency power converters.

This MOSFET is designed to operate at high temperatures, with a maximum junction temperature of 175°C, allowing for reliable operation even under harsh conditions. Its advanced package design ensures excellent thermal dissipation and mechanical durability.

The STGF20M65DF2 also integrates a Kelvin source connection that helps to minimize the gate loop inductance, thereby enhancing the switching performance and reducing EMI emissions. This feature is particularly beneficial in applications where fast switching and clean signal integrity are paramount.

In summary, the STGF20M65DF2 from STMicroelectronics represents a leap forward in power MOSFET technology, offering designers a powerful tool for creating more efficient, compact, and reliable power electronic systems. With its exceptional performance characteristics and robust design, it is set to play a crucial role in the advancement of power electronics across various industries.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3647 $61.4115
105+ $1.1199 $117.5895
160+ $1.0849 $173.5840
225+ $1.0499 $236.2275
285+ $1.0149 $289.2465
385+ $0.9099 $350.3115
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,800 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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