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STGWT40H65FB

Part No STGWT40H65FB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 650V 80A 283W TO3P-3L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 650V
Maximum Current Collector 80A
Pulsed Collector Current 160A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 40A
Maximum Power Dissipation 283W
Total Switching Energy(Ets) 498mJ (on), 363mJ (off)
Input Type Standard
Gate Charge 210nC
Turn-on and Turn-off delay time 40ns/142ns
Testing Conditions 400V, 40A, 5 Ohm, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Win Source Part Number 1103080-STGWT40H65FB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGWT40H65FB CAD Model

Description

STGWT40H65FB - A Cutting-Edge Power Transistor by STMicroelectronics

The STGWT40H65FB is an advanced power transistor developed by STMicroelectronics, a leading global semiconductor company. This device is part of ST's field-stop trench gate series, designed to offer high efficiency and reliability for a wide range of power applications. It is particularly well-suited for high-performance solutions where energy efficiency is paramount.

At the heart of the STGWT40H65FB is a 650V, 40A silicon carbide Power MOSFET. Silicon carbide is a superior semiconductor material that offers faster switching speeds, higher temperature tolerance, and better energy efficiency compared to traditional silicon devices. This makes the STGWT40H65FB an excellent choice for applications such as solar inverters, electric vehicle chargers, power supplies, and other energy-intensive industrial equipment.

The transistor features a very low on-state resistance (RDS(on)) which minimizes conduction losses and enhances overall system efficiency. Additionally, the STGWT40H65FB boasts a robust and rugged design that ensures stability and longevity, even under harsh operating conditions. Its high switching frequency allows for smaller and more cost-effective passive components, reducing the overall footprint and cost of the power systems it is integrated into.

With its advanced trench gate field-stop technology, the STGWT40H65FB provides excellent switching performance, which results in reduced electromagnetic interference (EMI). This is critical for maintaining performance and safety standards in sensitive electronic equipment. Moreover, the device's inherent fast intrinsic diode with low reverse recovery charge ensures that the switching losses are kept to a minimum, improving the performance of the overall system.

For engineers and designers, the STGWT40H65FB comes in a HiP247 package, which is known for its excellent thermal performance and ease of integration into various circuit designs. The package ensures that the heat generated by the device is effectively dissipated, maintaining the transistor's performance even under high load conditions.

In summary, the STGWT40H65FB from STMicroelectronics is a testament to the company's commitment to innovation and excellence in power electronics. It offers a combination of high efficiency, robustness, and reliability that makes it a top choice for designers looking to enhance the performance of their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2456 $62.2800
115+ $1.0221 $117.5415
175+ $0.9901 $173.2675
245+ $0.9582 $234.7590
315+ $0.9262 $291.7530
420+ $0.8304 $348.7680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,600 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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