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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 40A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 2V @ 15V, 20A
Maximum Power Dissipation 167W
Total Switching Energy(Ets) 209μJ (on), 261μJ (off)
Input Type Standard
Gate Charge 115nC
Turn-on and Turn-off delay time 42.5ns/177ns
Testing Conditions 400V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) 90ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 212281-STGW20H60DF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGW20H60DF CAD Model

Description

STGW20H60DF - IGBT from STMicroelectronics

The STGW20H60DF is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics, designed for a wide range of high-efficiency applications. This robust and powerful semiconductor device is engineered to combine the fast-switching performance of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor.

Key Features

  • High Voltage Capability: The STGW20H60DF is rated for a maximum collector-emitter voltage of 600V, making it suitable for high voltage applications.
  • Low On-State Voltage: This IGBT features a low on-state voltage drop (VCE(sat)) to enhance efficiency by minimizing conduction losses.
  • High Current Rating: With a continuous collector current (IC) rating of 40A, and a pulse collector current rating of 80A, it can handle significant power levels.
  • Fast Switching Speed: The device is designed for fast switching, reducing switching losses and improving overall performance.
  • Co-Packaged Diode: It includes a free-wheeling diode with a low forward voltage drop, which is co-packaged with the IGBT to simplify design and enhance efficiency.

Applications

The STGW20H60DF is ideal for a variety of applications that require high-efficiency and high-speed switching, such as:

  • Uninterruptible Power Supplies (UPS)
  • Welding equipment
  • Induction heating
  • Solar inverters
  • High-frequency converters

Advantages

Utilizing the latest technology, the STGW20H60DF offers several advantages:

  • Energy Efficiency: Its low conduction and switching losses make it highly energy-efficient.
  • Thermal Management: The device has a low thermal resistance, which helps in maintaining a lower operating temperature and enhances reliability.
  • Robustness: It is designed to be rugged and withstand harsh operating conditions, contributing to a longer product lifespan.

Overall, the STGW20H60DF from STMicroelectronics is a high-performance IGBT that offers an excellent balance between efficiency and power handling, making it a go-to choice for designers looking to optimize their high-power electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1836 $65.5080
75+ $1.7918 $134.3850
115+ $1.7358 $199.6170
155+ $1.6798 $260.3690
200+ $1.6238 $324.7600
270+ $1.4558 $393.0660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 6,670 pieces
MOQ: 30 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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