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STGB15H60DF

Part No STGB15H60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 30A 115W D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 27 Weeks
Features IGBT Trench Field Stop 600 V 30 A 115 W Surface Mount D²PAK (TO-263)
Manufacturer STMicroelectronics
Package Reel - TR
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package D2PAK (TO-263)
Family Name STGB15
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-14976-6, 497-14976-2, 497-14976-1
Quantity per package 1000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 935354-STGB15H60DF
Ultra Librarian 3D Model Ultra Librarian STGB15H60DF CAD Model

Description

STGB15H60DF - IGBT from STMicroelectronics

The STGB15H60DF is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics, a global semiconductor leader. This IGBT is designed to offer high efficiency and fast switching performance in a wide range of applications, including motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment.

Featuring a trench gate field-stop structure, the STGB15H60DF provides an optimal trade-off between conduction and switching losses, enabling high-efficiency power conversion in systems where energy conservation is paramount. The device operates at a maximum collector-emitter voltage (VCE) of 600V, which ensures robust performance in high voltage applications.

With a collector current rating of 15A at 25°C, this IGBT is capable of handling significant power levels, making it suitable for medium power applications. Moreover, the STGB15H60DF boasts a low on-state voltage drop (VCE(sat)) which contributes to reduced power dissipation and improved thermal management during operation.

The device is housed in a TO-263 (D2PAK) package, which offers a compact footprint while allowing for efficient heat dissipation. This packaging also facilitates easy mounting on a printed circuit board (PCB), making it a convenient choice for designers and manufacturers.

For protection and reliability, the STGB15H60DF incorporates a co-packaged fast recovery diode, which ensures rapid recovery during switching and helps to protect the IGBT from potentially damaging voltage transients. This feature makes the device more resilient and extends its operational lifespan.

STMicroelectronics has equipped the STGB15H60DF with a maximum operating junction temperature of 175°C, providing a wide thermal margin for various applications. This high-temperature capability allows for operation in environments with elevated ambient temperatures without compromising performance or reliability.

In summary, the STGB15H60DF from STMicroelectronics is a high-performance IGBT that offers a balance of fast switching, high efficiency, and thermal resilience. With its robust design and integrated features, it is an excellent choice for designers looking to optimize their power conversion systems in terms of both performance and cost.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9048 $52.2864
37+ $2.7174 $100.5438
58+ $2.6237 $152.1746
83+ $2.4363 $202.2129
107+ $2.3426 $250.6582
134+ $2.2489 $301.3526
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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