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STGF20NB60S

Part No STGF20NB60S
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 24A 40W TO220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 25 Weeks
Features IGBT - 600 V 24 A 40 W Through Hole TO-220FP
Manufacturer STMicroelectronics
Series PowerMESH™
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3 Full Pack
Case / Package TO-220FP
Family Name STGF20
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number STGF20NB60S-ND, -497-12596-5, 497-12596-5
Quantity per package 50
Popularity High
Supply and Demand Status Balance
Win Source Part Number 897989-STGF20NB60S
Ultra Librarian 3D Model Ultra Librarian STGF20NB60S CAD Model

Description

STGF20NB60S - IGBT from STMicroelectronics

The STGF20NB60S is a high-performance insulated gate bipolar transistor (IGBT) manufactured by STMicroelectronics, a global leader in semiconductor solutions. This IGBT is designed to offer a combination of fast switching, low on-state voltage, and high thermal performance, making it suitable for a variety of power applications including motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.

With a maximum collector-emitter voltage (V<sub>CE) of 600V, the STGF20NB60S can handle high voltage operations efficiently. It has a collector current rating of 20A at 25°C, ensuring that it can support significant power throughput without overheating. This capability is further enhanced by its low on-state voltage drop, which reduces power dissipation and improves overall efficiency.

The device features a robust and rugged design, with a maximum operating junction temperature of 150°C. This allows it to perform reliably even in harsh conditions, extending its potential applications to industrial and automotive environments. Additionally, the STGF20NB60S is characterized by its fast switching speed, which is crucial for reducing switching losses and improving the performance of high-frequency power circuits.

Another key advantage of the STGF20NB60S is its co-packaged freewheeling diode, which provides protection against reverse voltage transients and simplifies circuit design by reducing the number of external components required. This integration not only saves space but also enhances the reliability of the overall system.

The device is available in a TO-220FP package, which is widely used in the industry and known for its good thermal performance. The package is designed to be mounted onto a heatsink, which is necessary for applications that require high power dissipation. The TO-220FP package also offers excellent isolation between the IGBT and the heatsink, providing additional safety for the user and the circuit.

In summary, the STGF20NB60S from STMicroelectronics is a versatile and efficient IGBT that is well-suited for a range of demanding power applications. Its high voltage capability, low on-state voltage, and fast switching characteristics make it an ideal choice for designers looking to optimize their power management systems.

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