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STGW35NB60SD

Part No STGW35NB60SD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series PowerMESH
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 70A
Current - Collector Pulsed (Icm) 250A
Vce(on) (Maximum) @ Vge, Ic 1.7V @ 15V, 20A
Power - Max 200W
Switching Energy 840μJ (on), 7.4mJ (off)
Input Type Standard
Gate Charge 83nC
Td (on/off) @ 25°C 92ns/1.1μs
Test Condition 480V, 20A, 100 Ohm, 15V
Reverse Recovery Time (trr) 44ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247-3
Win Source Part Number 1261046-STGW35NB60SD
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Motor Drive & Control
Ultra Librarian 3D Model Ultra Librarian STGW35NB60SD CAD Model

Description

STGW35NB60SD - IGBT from STMicroelectronics

The STGW35NB60SD is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics, a leader in semiconductor solutions. This IGBT is designed to cater to a wide range of applications that require efficient and fast switching, along with robust performance in high voltage and high current environments.

Key Features

  • Voltage and Current Ratings: With a collector-emitter voltage (VCE) of 600V and a collector current (IC) rating of 35A, the STGW35NB60SD is capable of handling significant power levels, making it ideal for demanding electrical applications.
  • High-Speed Switching: This IGBT is optimized for fast switching, which is crucial for improving efficiency in power converters, inverters, and other high-frequency applications.
  • Low On-State Voltage Drop (VCE(sat)): The low on-state voltage drop ensures reduced conduction losses, thus improving the overall efficiency of the device.
  • Co-Packaged Diode: It comes with an integrated ultrafast soft recovery anti-parallel diode, which is essential for reducing switching losses and improving the performance of the IGBT in circuits where reverse current flow is expected.

Applications

  • Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction Circuits
  • Inductive Heating
  • Welding Equipment

Reliability and Performance

The STGW35NB60SD is built to offer exceptional reliability and performance under a variety of operating conditions. Its robust design ensures a long operational life, and its ability to withstand high temperatures and electrical stresses makes it a preferred choice for industrial and commercial power applications.

Package and Mounting

Encased in a TO-247 package, the STGW35NB60SD provides a convenient and standardized mounting solution, making it easy to integrate into various circuit designs. The TO-247 package is known for its excellent thermal performance, which is critical for maintaining stability and reliability when the device is under heavy load.

Overall, the STGW35NB60SD from STMicroelectronics represents a blend of advanced semiconductor technology with practical design considerations, resulting in a highly effective component for power management and conversion applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.4910 $58.4190
22+ $5.3259 $117.1698
34+ $5.1595 $175.4230
47+ $4.9931 $234.6757
60+ $4.8267 $289.6020
81+ $4.3273 $350.5113
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Availability: 1,200 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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