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STGP19NC60KD

Part No STGP19NC60KD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 600V 35A 125000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 35A 125W TO220
Sample
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 35A
Pulsed Collector Current 75A
Collector-emitter saturation voltage(Max) 2.75V @ 15V, 12A
Maximum Power Dissipation 125W
Total Switching Energy(Ets) 165μJ (on), 255μJ (off)
Input Type Standard
Gate Charge 55nC
Turn-on and Turn-off delay time 30ns/105ns
Testing Conditions 480V, 12A, 10 Ohm, 15V
Reverse Recovery Time (trr) 31ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Win Source Part Number 083853-STGP19NC60KD
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STGP19NC60KD
Introduction Date May 08, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian STGP19NC60KD CAD Model

Description

STGP19NC60KD - IGBT from STMicroelectronics

The STGP19NC60KD is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, designed to meet the efficiency and reliability demands of modern power electronics. This IGBT is part of STMicroelectronics' PowerMESH™ line, which is renowned for its excellent performance in high-speed switching applications.

Key Features

  • High Voltage Capability: The STGP19NC60KD is rated for a collector-emitter voltage (V<sub>CE) of 600V, making it suitable for a variety of high-voltage applications.
  • High Current Rating: With a continuous collector current (I<sub>C) of 19A at 25°C, this IGBT can handle significant power levels, crucial for industrial and power applications.
  • Low On-Voltage Drop (V<sub>CE(sat)): The device features a low saturation voltage, which translates to reduced conduction losses and improved efficiency.
  • High Switching Speed: The fast switching characteristics of the STGP19NC60KD make it an ideal choice for applications requiring high-frequency operation.
  • Co-Packaged Diode: This IGBT comes with a co-packaged fast recovery diode, which simplifies circuit design and enhances performance during switching.
  • Short-Circuit Rating: It offers a short-circuit withstand time of 10μs, providing robust protection against fault conditions.

Applications

The STGP19NC60KD is well-suited for an array of applications, including:

  • Motor drives and inverters
  • Switching power supplies
  • Power factor correction circuits
  • Inductive heating and welding equipment
  • Uninterruptible power supplies (UPS)

Quality and Reliability

STMicroelectronics is committed to providing products that meet the highest standards of quality and reliability. The STGP19NC60KD is manufactured with robust materials and tested under stringent conditions to ensure it meets the rigorous demands of industrial and power applications. The device's longevity and performance are backed by STMicroelectronics' reputation as a trusted leader in semiconductor solutions.

For detailed specifications, application notes, and additional resources, engineers and designers are encouraged to visit the official STMicroelectronics website or contact their local ST sales office.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0411 $52.0550
120+ $0.8543 $102.5160
185+ $0.8276 $153.1060
250+ $0.8009 $200.2250
325+ $0.7742 $251.6150
435+ $0.6941 $301.9335
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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