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STGB40H65FB

Part No STGB40H65FB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT BIPO 650V 40A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 27 Weeks
Features IGBT Trench Field Stop 650 V 80 A 283 W Surface Mount D²PAK (TO-263)
Manufacturer STMicroelectronics
Series HB
Package Reel - TR
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package D2PAK (TO-263)
Family Name STGB40
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-16977-2, 497-16977-1, STGB40H65FB-ND, 497-16977-6
Quantity per package 1000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 935359-STGB40H65FB
Ultra Librarian 3D Model Ultra Librarian STGB40H65FB CAD Model

Description

STGB40H65FB - High Performance IGBT by STMicroelectronics

STMicroelectronics, a global semiconductor leader, presents the STGB40H65FB, an advanced insulated gate bipolar transistor (IGBT) designed for high efficiency and reliability in a variety of power applications. This IGBT is part of the STPOWER™ product line, which is renowned for its performance in energy conversion systems.

Key Features

  • High Voltage Capability: The STGB40H65FB is rated for a maximum collector-emitter voltage of 650V, making it suitable for applications that demand high breakdown voltage.
  • Low On-State Voltage Drop (VCE(sat)): With a typical value of 1.55V at 25°C, the device ensures reduced conduction losses, enhancing overall system efficiency.
  • High Current Rating: This IGBT can handle continuous collector currents up to 40A at 100°C, allowing for robust performance in high-power circuits.
  • Short-Circuit Withstand Time: The device offers a guaranteed short-circuit withstand time of 10μs, providing improved robustness and reliability in the event of a fault condition.
  • Co-packaged with Free Wheeling Diode: The integration of a fast and soft recovery anti-parallel diode ensures efficient switching performance and reduces component count in the circuit design.

Applications

The STGB40H65FB is engineered to meet the demanding requirements of a wide range of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Welding Equipment
  • Power Factor Correction (PFC) Circuits
  • Solar Inverters
  • Induction Heating Systems
  • High-Performance Power Converters

Advanced Technologies

Utilizing STMicroelectronics' proprietary trench gate field-stop technology, the STGB40H65FB offers optimized performance that combines fast switching speed with low energy losses during turn-off. This technology also contributes to the device's excellent thermal characteristics, ensuring stable operation over a wide temperature range.

Quality and Reliability

STMicroelectronics is committed to the highest quality standards. The STGB40H65FB is manufactured in state-of-the-art facilities, ensuring that each component meets rigorous quality control measures. Customers can trust in the reliability and longevity of this IGBT, which is backed by STMicroelectronics' extensive experience in the semiconductor industry.

Whether you are designing a new power system or upgrading an existing one, the STGB40H65FB offers the performance, efficiency, and reliability to meet your needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7522 $52.2918
45+ $2.2582 $101.6190
69+ $2.1877 $150.9513
95+ $2.1171 $201.1245
123+ $2.0465 $251.7195
164+ $1.8348 $300.9072
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,660 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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