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STGW80V60DF

Part No STGW80V60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description Low thermal resistance
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 120A
Current - Collector Pulsed (Icm) 240A
Vce(on) (Maximum) @ Vge, Ic 2.3V @ 15V, 80A
Power - Max 469W
Switching Energy 1.8mJ (on), 1mJ (off)
Input Type Standard
Gate Charge 448nC
Td (on/off) @ 25°C 60ns/220ns
Test Condition 400V, 80A, 5 Ohm, 15V
Reverse Recovery Time (trr) 60ns
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3 Exposed Pad
Manufacturer Package TO-247
Win Source Part Number 1261056-STGW80V60DF
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Family Name STGW80V60DF
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian STGW80V60DF CAD Model

Description

STGW80V60DF - STMicroelectronics IGBT

The STGW80V60DF is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by STMicroelectronics, a global semiconductor leader. This IGBT is part of the STPOWER™ family, which is known for its efficiency and reliability in power electronics applications. It is specifically engineered to meet the demanding requirements of a wide range of high-power applications such as motor drives, uninterruptible power supplies (UPS), inverter welders, and solar inverters.

With a maximum collector-emitter voltage of 600V and a continuous collector current rating of 80A at 25°C, the STGW80V60DF offers robust performance for high-power switching applications. It also features a low collector-emitter saturation voltage (VCE(sat)), which minimizes conduction losses and enhances overall system efficiency.

The device incorporates STMicroelectronics' advanced trench gate field-stop technology, which provides a perfect balance between conduction and switching losses. This technology enables the IGBT to operate at high junction temperatures, up to 175°C, without compromising its performance, thus ensuring reliability even under extreme conditions.

The STGW80V60DF is also equipped with a co-packaged fast recovery diode, which has a soft recovery characteristic that reduces electromagnetic interference (EMI) and further improves the efficiency of the system. This feature makes it an excellent choice for applications where low noise and high efficiency are critical.

This IGBT comes in a TO-247 long leads package, which is known for its excellent thermal performance and ease of mounting on a heatsink. The package is designed to handle high current and power levels while maintaining a low thermal resistance between the junction and the case.

In summary, the STGW80V60DF IGBT from STMicroelectronics is a high-efficiency, robust power transistor that is ideal for a variety of high-power applications. With its advanced technology and reliable performance, it is a top choice for engineers looking to design energy-efficient and durable power electronic systems.

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23+ $4.3762 $100.6526
36+ $4.2394 $152.6184
49+ $4.1027 $201.0323
64+ $3.9659 $253.8176
85+ $3.5556 $302.2260
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MOQ: 10 pcs
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