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Same model may have multiple batches, images only for reference.
IGP03N120H2XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IGP03N120H2XKSA1

Part No IGP03N120H2XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 9.6A 62.5W TO220-3 / Trans IGBT Chip N-CH 1200V 9.6A 62500mW 3-Pin(3+Tab) TO-220 Tube
Datasheet
IGP03N120H2XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Part Status Obsolete(EOL)
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 9.6A
Current - Collector Pulsed (Icm) 9.9A
Vce(on) (Maximum) @ Vge, Ic 2.8V @ 15V, 3A
Power - Max 62.5W
Switching Energy 290μJ
Input Type Standard
Gate Charge 22nC
Td (on/off) @ 25°C 9.2ns/281ns
Test Condition 800V, 3A, 82 Ohm, 15V
Operating Temperature Range -40°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-220-3
Manufacturer Package PG-TO220-3
Win Source Part Number 776690-IGP03N120H2XKSA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 500
Family Name IGP03N120H2XKSA1
Introduction Date March 11, 2003
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IGP03N120H2XKSA1 CAD Model

Description

The Infineon Technologies IGP03N120H2XKSA1 is a through-hole mounted IGBT transistor with a power maximum of 62.5W.

  • Collector Current: 9.6A
  • Collector-Emitter Breakdown Voltage: 1200V
  • Switching Energy: 290μJ
  • Gate Charge: 22nC

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.2793 $64.9551
16+ $7.6138 $121.8208
24+ $7.3758 $177.0192
33+ $7.1379 $235.5507
42+ $6.9000 $289.8000
57+ $6.1862 $352.6134
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