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STGBL6NC60DIT4

Part No STGBL6NC60DIT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 14A 56W D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 14A
Pulsed Collector Current 18A
Collector-emitter saturation voltage(Max) 2.9V @ 15V, 3A
Maximum Power Dissipation 56W
Total Switching Energy(Ets) 32μJ (on), 24μJ (off)
Input Type Standard
Gate Charge 12nC
Turn-on and Turn-off delay time 6.7ns/46ns
Testing Conditions 390V, 3A, 10 Ohm, 15V
Reverse Recovery Time (trr) 23ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 1103009-STGBL6NC60DIT4
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STGBL6NC60DIT4 CAD Model

Description

STGBL6NC60DIT4 - IGBT Transistor by STMicroelectronics

The STGBL6NC60DIT4 is a cutting-edge Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a leader in semiconductor solutions. This IGBT is designed to cater to a wide range of high-efficiency applications, particularly in the field of power management and switching. With its robust design and advanced technology, the STGBL6NC60DIT4 is an ideal choice for designers looking to improve system performance while reducing energy consumption.

This IGBT features a maximum collector-emitter voltage (VCE) of 600V, which allows it to handle high voltage applications with ease. Its collector current rating of 6A at 25°C ensures that it can manage significant power levels, making it suitable for both industrial and consumer applications. The STGBL6NC60DIT4 also boasts a low collector-emitter saturation voltage (VCE(sat)), which contributes to its high efficiency by minimizing on-state power dissipation.

One of the key advantages of the STGBL6NC60DIT4 is its co-packaged fast recovery diode. This diode is specifically designed to complement the switching characteristics of the IGBT, providing efficient and fast switching performance. This feature is particularly beneficial in applications such as motor drives, power inverters, and power factor correction circuits, where fast and efficient switching is critical.

The device is housed in a D2PAK package, which not only ensures a compact footprint but also provides excellent thermal performance. The package is designed to facilitate easy mounting onto a printed circuit board (PCB) and is compatible with standard surface-mount technology (SMT) processes, thereby simplifying the assembly process.

STMicroelectronics has equipped the STGBL6NC60DIT4 with built-in protection features, such as over-temperature and over-current protection, enhancing the reliability and longevity of the device. This protection ensures that the IGBT operates within safe parameters, preventing damage from abnormal operating conditions.

In summary, the STGBL6NC60DIT4 from STMicroelectronics is a high-performance IGBT that offers a combination of high voltage capability, low power dissipation, fast switching, and reliable protection features. Its compact D2PAK package and compatibility with SMT processes make it an excellent choice for a wide range of power applications where efficiency and reliability are paramount.

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