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Products specifications Report Issue?

Manufacturer Rohm Semiconductor
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 10A
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Maximum) at Id, Vgs 15.6mOhm at 10A, 4.5V
Vgs(th) (Maximum) at Id 1.2V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 23.5nC at 4.5V
Maximum Vgs ±8V
Input Capacitance (Ciss) (Maximum) at Vds 1660pF at 10V
Power Dissipation (Maximum) 2W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package HUML2020L8
Manufacturer Package 8-PowerUDFN
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 800890-RF4C100BCTCR
Ultra Librarian 3D Model Ultra Librarian RF4C100BCTCR CAD Model

Description

The Rohm Semiconductor RF4C100BCTCR is a high popularity MOSFET component from Rohm Semiconductor.

  • FET Type: P-Channel
  • Drain to Source Voltage: 20V
  • Package: 8-PowerUDFN
  • Power Dissipation: 2W
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7132 $53.4900
175+ $0.5852 $102.4100
265+ $0.5669 $150.2285
365+ $0.5486 $200.2390
475+ $0.5303 $251.8925
635+ $0.4755 $301.9425
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 186,000 pieces
MOQ: 75 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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