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MMBF2201NT1

Part No MMBF2201NT1
Manufacturer ON Semiconductor
Catalog FETs - Single
Description MOSFET N-CH 20V 300MA SOT-323 / Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer ON Semiconductor
Packaging Cut Tape (CT)
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) at 25°C 300mA
Rds On (Maximum) at Id, Vgs 1Ohm at 300mA, 10V
Vgs(th) (Maximum) at Id 2.4V at 250μA
Input Capacitance (Ciss) (Maximum) at Vds 45pF at 5V
Mounting Style SMD
Supplier Device Package SC-70-3 (SOT323)
Manufacturer Package SC-70, SOT-323
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Popularity High
Supply and Demand Status Sufficient
Win Source Part Number 800528-MMBF2201NT1
Ultra Librarian 3D Model Ultra Librarian MMBF2201NT1 CAD Model

Description

Product Overview: MMBF2201NT1

The MMBF2201NT1 is a high-performance N-Channel Field-Effect Transistor (FET) designed and manufactured by ON Semiconductor, a leading provider in the semiconductor industry. This compact and efficient MOSFET is a versatile component suitable for a wide range of applications, from power management to signal processing.

Key Features

  • Low On-Resistance: The MMBF2201NT1 offers a low on-resistance, which results in reduced power loss and improved energy efficiency during operation.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal delay and high performance in circuits.
  • Low Threshold Voltage: The low gate threshold voltage makes it easy to drive the transistor, even with low-voltage logic levels, which is particularly useful in battery-operated devices.
  • SOT-23 Package: Housed in a small surface-mount SOT-23 package, the MMBF2201NT1 is designed for space-constrained applications and is compatible with automated assembly processes.

Applications

The versatility of the MMBF2201NT1 allows it to be used in a variety of applications, including:

  • Power management circuits
  • DC/DC converters
  • Battery-powered devices
  • Motor control systems
  • Switching regulators
  • Load/charge switches

Technical Specifications

Parameter Value
Drain-Source Voltage (VDS) 60V
Gate-Source Voltage (VGS) ±20V
Continuous Drain Current (ID) 115mA
Power Dissipation (PD) 225mW
Operating Temperature Range -55°C to +150°C

The MMBF2201NT1 from ON Semiconductor is a reliable and cost-effective solution for designers looking to incorporate a robust N-channel MOSFET into their electronic designs. Its combination of high performance, low power consumption, and compact form factor makes it an excellent choice for both commercial and industrial applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
250+ $0.2016 $50.4000
605+ $0.1655 $100.1275
940+ $0.1603 $150.6820
1,290+ $0.1551 $200.0790
1,670+ $0.1500 $250.5000
2,235+ $0.1344 $300.3840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 250 pcs
Order Increment : 1 pcs
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