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PMV164ENEAR

Part No PMV164ENEAR
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 1.6A TO236AB / N-Channel 60 V 1.6A (Ta) 640mW (Ta), 5.8W (Tc) Surface Mount TO-236AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 218mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 30 V
Power Dissipation (Max) 640mW (Ta), 5.8W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number PMV164
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 934661157215,1727-8650-6,1727-8650-2,1727-8650-1
Standard Package 3,000
Win Source Part Number 1116658-PMV164ENEAR
Ultra Librarian 3D Model Ultra Librarian PMV164ENEAR CAD Model

Description

The PMV164ENEAR N-channel MOSFET transistor is a top choice for automotive applications.

  • Manufacturer: Nexperia USA Inc.
  • Package: TO-236AB
  • Maximum Power Dissipation: 640mW (Ta), 5.8W (Tc)
  • Maximum Gate Voltage: ±20V
  • Operating Temperature: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.6881 $50.6430
75+ $1.3851 $103.8825
115+ $1.3418 $154.3070
155+ $1.2986 $201.2830
200+ $1.2553 $251.0600
270+ $1.1254 $303.8580
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Availability: 15,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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