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Same model may have multiple batches, images only for reference.
SI8413DB-T1-E1 Real Image
Same model may have multiple batches, images only for reference.

SI8413DB-T1-E1

Part No SI8413DB-T1-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.8A 2X2 4-MFP
Datasheet
SI8413DB-T1-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 21nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.47W (Ta)
Maximum Rds On at Id,Vgs 48 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-Microfoot
Dimension 4-XFBGA, CSPBGA
Win Source Part Number 096343-SI8413DB-T1-E1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI8413DB-T1-E1 CAD Model

Description

The SI8413DB-T1-E1 from Vishay is a P-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 4.8A.

  • Rds On (Max): 48 mOhm @ 1A, 4.5V
  • Solution: reliable and cost-effective for power management applications
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6145 $58.3775
230+ $0.5036 $115.8280
355+ $0.4886 $173.4530
490+ $0.4724 $231.4760
635+ $0.4562 $289.6870
850+ $0.4100 $348.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 450,100 pieces
MOQ: 95 pcs
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