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SI7938DP-T1-GE3

Part No SI7938DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 60A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 60A
Maximum Rds On at Id,Vgs 5.8 mOhm @ 18.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 2300pF @ 20V
Maximum Power Dissipation 46W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 028695-SI7938DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Power Management
Family Name Si7938DP
Introduction Date September 28, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SI7938DP-T1-GE3 CAD Model

Description

The Vishay SI7938DP-T1-GE3 is a dual N-channel FET with a standard feature.

  • Maximum Power Dissipation: 46W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 60A
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Family: Si7938DP
  • Package: PowerPAK SO-8 Dual
  • ECCN: EAR99
  • Halogen-Free: True
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2971 $51.8840
85+ $1.2150 $103.2750
130+ $1.1739 $152.6070
185+ $1.0918 $201.9830
240+ $1.0508 $252.1920
300+ $1.0098 $302.9400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 77,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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