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Same model may have multiple batches, images only for reference.
SI7882DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7882DP-T1-E3

Part No SI7882DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 13A PPAK SO-8 / Trans MOSFET N-CH 12V 13A 8-Pin PowerPAK SO T/R
Datasheet
SI7882DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 30nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 17A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 091441-SI7882DP-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name Si7882DP
Introduction Date July 23, 2002
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI7882DP-T1-E3 CAD Model

Description

Vishay is a manufacturer of electronic components, and their product with Win Source Part Number 091441-SI7882DP-T1-E3 is an N-channel MOSFET.

  • Category: Discrete Semiconductor Products
  • Case/Package: PowerPAK SO-8
  • Temperature Range: -55°C to 150°C

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